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R5F564MFDDFB Datasheet(PDF) 214 Page - Renesas Technology Corp |
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R5F564MFDDFB Datasheet(HTML) 214 Page - Renesas Technology Corp |
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214 / 228 page ![]() R01DS0173EJ0110 Rev.1.10 Page 214 of 228 Oct 24, 2016 RX64M Group 5. Electrical Characteristics Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000), erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is prohibited). Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the value of the minimum value). Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value. Table 5.54 Data Flash Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0, VCC_USBA = AVCC_USBA = 3.0 to 3.6 V VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V, Temperature range for programming/erasure: Ta = Topr Item Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Min. Typ. Max. Min. Typ. Max. Programming time 4 bytes tDP4 — 0.36 3.8 — 0.16 1.7 ms Erasure time 64 bytes tDE64 —3.1 18 —1.7 10 ms Blank check time 4 bytes tDBC4 —— 84 —— 30 μs 64 bytes tDBC64 — — 280 — — 100 μs 2 Kbytes tDBC2K — — 6169 — — 2200 μs Reprogramming/erasure cycle*1 NDPEC 100000 *2 — — 100000 *2 —— — Suspend delay time during programming tDSPD — — 264 — — 120 μs First suspend delay time during erasure (in suspend priority mode) tDSESD1 — — 216 — — 120 μs Second suspend delay time during erasure (in suspend priority mode) tDSESD2 — — 300 — — 300 μs Suspend delay time during erasing (in erasure priority mode) tDSEED — — 300 — — 300 μs Forced stop command tFD —— 32 —— 20 μs Data hold time*3 tDDRP 10 — — 10 — — — |
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