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MP2632 Datasheet(PDF) 5 Page - Monolithic Power Systems |
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MP2632 Datasheet(HTML) 5 Page - Monolithic Power Systems |
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5 / 37 page  MP2632 – ALL-IN-ONE, 3A SW CHARGER, 3A BOOST MP2632 Rev.1.0 www.MonolithicPower.com 5 6/24/2016 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2016 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = 5.0V, RS1 = 10mΩ, TA = +25°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units IN-to-SYS NMOS on resistance RIN to SYS VCC = 5V 49 55 62 m Ω High-side PMOS on resistance RH_DS VCC = 5V 20 26 31 m Ω Low-side NMOS on resistance RL_DS VCC = 5V 20 26 31 m Ω High-side PMOS peak current limit IPEAK_HS CC charge mode/boost mode 5.7 7 8.4 A TC charge mode 1.9 2.3 2.8 A Low-side NMOS peak current limit IPEAK_LS 6.4 8 9.6 A Switching frequency Fsw 500 600 800 kHz VCC UVLO VCC_UVLO 1.96 2.16 2.36 V VCC UVLO hysteresis 100 mV Charge Mode Input quiescent current IQ_IN Charge mode, ISYS = 0, battery float 1.8 2.5 mA Input current limit for DCP IIN_LIMIT RlLIM = 88.7k 380 435 490 mA RlLIM = 49.9k 740 820 900 RlLIM = 14.7k 2580 2840 3100 Input current limit for SDP IUSB SDP is detected using DP1/DM1 detection 400 450 500 mA Input over-voltage protection VIN_OVP VIN rising 5.8 6.0 6.2 V VIN_OVP hysteresis VIN falling 250 mV Input under-voltage lockout VIN_UVLO VIN rising 3.3 3.45 3.6 V VUVLO hysteresis VIN falling 155 mV Input over-current threshold IIN_OCP 5 A Input over-current blanking time (5) τ INOCBLK 200 µs Input over-current recover time (5) τ INRECVR 150 ms Terminal battery voltage VBATT_FULL Connect VB to GND 4.328 4.35 4.372 V Leave VB floating 4.179 4.2 4.221 Connect VB to VCC 4.428 4.45 4.472 Recharge threshold VRECH Connect to VB to GND 4.1 4.16 4.22 V Leave VB floating 3.95 4.02 4.08 Connect VB to VCC 4.19 4.26 4.32 Trickle charge voltage threshold VBATT_TC Connect VB to GND 3 3.07 3.13 V Leave VB floating 2.9 2.96 3.02 Connect VB to VCC 3.07 3.14 3.2 |
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