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NT5CC128M8GP-EKB Datasheet(PDF) 145 Page - Nanya Technology Corporation.

Part # NT5CC128M8GP-EKB
Description  Commercial, Industrial and AutomotiveDDR3(L) 1 Gb SDRAM
PDF  160 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5CC128M8GP-EKB Datasheet(HTML) 145 Page - Nanya Technology Corporation.

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Version 2.2
145
Nanya Technology Cooperation ©
04/2019
All Rights Reserved.
NTC Proprietary
Level: Property
DDR3(L) 1Gb SDRAM
NT5CB(C)128M8GN / NT5CB(C)64M16GP
Parameter
Symbol
DDR3(L)-1600
DDR3(L)-1866
DDR3-2133
Unit
Min.
Max.
Min.
Max.
Min.
Max.
ODT Timings
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONPD
2
8.5
2
8.5
2
8.5
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFPD
2
8.5
2
8.5
2
8.5
ns
RTT turn-on
tAON
-225
225
-195
195
-180
180
ps
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
0.3
0.7
0.3
0.7
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/
 rising edge after
write leveling mode is programmed
tWLMRD
40
-
40
-
40
-
nCK
DQS/
 delay after write leveling mode is
programmed
tWLDQSEN
25
-
25
-
25
-
nCK
Write leveling setup time from rising CK,

crossing to rising DQS,
 crossing
tWLS
165
-
140
-
125
-
ps
Write leveling hold time from rising DQS,
 crossing to rising CK,  crossing
tWLH
165
-
140
-
125
-
ps
Write leveling output delay
tWLO
0
7.5
0
7.5
0
7.5
ns
Write leveling output error
tWLOE
0
2
0
2
0
2
ns
Jitter Notes
Note 1
U
nit “tCK(avg)” represents the actual tCK(avg) of the input clock under operation. Unit “nCK” represents one clock cycle
of the input clock, counting the actual clock edges. ex) tMRD=4 [nCK] means; if one Mode Register Set command is
registered at Tm, another Mode Register Set command may be registered at Tm+4, even if (Tm+4-Tm) is 4 x tCK(avg) +
tERR (4per), min.
Note 2
These parameters are measured from a command/address signal (CKE,
, RA, A, WE, ODT, BA0, A0, A1, etc)
transition edge to its respective clock signal (CK/
) crossing. The spec values are not affected by the amount of clock
jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the
command/address. That is, these parameters should be met whether clock jitter is present or not.
Note 3
These parameters are measured from a data strobe signal (DQS(L/U),
LU)) crossing to its respective clock signal
(CK,
) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc), as
these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or
not.
Note 4
These parameters are measured from a data signal (DM(L/U), DQ(L/U)0, DQ(L/U)1, etc.) transition edge to its respective
data strobe signal (DQS(L/U),
LU) crossing.
Note 5
For these parameters, the DDR3(L) SDRAM device supports tnPARAM [nCK] = RU{Tparam[ns] / tCK(avg)[ns]}, which is
in clock cycles, assuming all input clock jitter specifications are satisfied.
Note 6
When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR (mper), act of
the input clock, where 2 <= m <=12. (Output derating is relative to the SDRAM input clock.)
Note 7
When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the
input clock. (Output deratings are relative to the SDRAM input clock.)



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