GD25B256DFIS datasheet(44/82 Pages) GIGADEVICE

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3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B256D

Figure 42 Sector Erase Sequence Diagram (ADS=1)

Figure 43 Sector Erase with 4-Byte Address Sequence Diagram (ADS=0 or ADS=1)

7.18.

32KB Block Erase (BE32 52H or 4BE32 5CH)

The 32KB Block Erase (BE) command is erased the all data of the chosen block. A Write Enable (WREN) command

must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE) command is

entered by driving CS# low, followed by the command code, and three address Bytes on SI. Any address inside the block

is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence.

The 32KB Block Erase command sequence: CS# goes low  sending 32KB Block Erase command  3-Byte address

on SI  CS# goes high. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise

the 32KB Block Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle

(whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the

value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is

0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.

A 32KB Block Erase (BE) command applied to a block which is protected by the Block Protect (TB, BP3, BP2, BP1, and

BP0) bits is not executed.

Command

20H

CS#

SCLK

37 38 39

MSB

32 Bits Address

31 30

Command

21H

CS#

SCLK

37 38 39

MSB

32 Bits Address

31 30

GD25B256DFIS Datasheet(PDF) 44 Page - GigaDevice Semiconductor (Beijing) Inc.