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GD25B256DFIS Datasheet(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25B256DFIS Datasheet(HTML) 46 Page - GigaDevice Semiconductor (Beijing) Inc. |
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46 / 82 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25B256D 46 Figure 47 64KB Block Erase Sequence Diagram (ADS=0) Figure 48 64KB Block Erase Sequence Diagram (ADS=1) Figure 49 64KB Block Erase with 4-Byte Address Sequence Diagram (ADS=0 or ADS=1) 7.20. Chip Erase (CE) (60/C7H) The Chip Erase (CE) command is erased the all data of the chip. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence. The Chip Erase command sequence: CS# goes low sending Chip Erase command CS# goes high. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is ignored if one or more sectors/blocks are protected. Figure 50 Chip Erase Sequence Diagram Command 0 1 2 3 4 5 6 7 60H or C7H CS# SCLK SI Command 0 1 2 3 4 5 6 7 D8H CS# SCLK SI 8 9 29 30 31 MSB 2 1 0 24 Bits Address 23 22 Command 0 1 2 3 4 5 6 7 D8H CS# SCLK SI 8 9 37 38 39 MSB 2 1 0 32 Bits Address 31 30 Command 0 1 2 3 4 5 6 7 DCH CS# SCLK SI 8 9 37 38 39 MSB 2 1 0 32 Bits Address 31 30 |
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