M95M04-DR datasheet(34/46 Pages) STMICROELECTRONICS

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DC and AC parameters

M95M04-DR

34/46

DS12179 Rev 1

Table 11. Cycling performance by groups of four bytes

Symbol

Parameter

Test conditions

Min.

Max.

Unit

Ncycle

Write cycle endurance(1)

1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,

4*N+2, 4*N+3], where N is an integer. The Write cycle endurance is defined by characterization and

qualification.

TA ≤ 25 °C,

VCC(min) < VCC < VCC(max)

4,000,000

Write cycle(2)

2. A Write cycle is executed when either a Page write, a Byte write, a WRSR, a WRID or an LID instruction is

decoded. When using the Byte write, the Page write or the WRID instruction, refer also to Section 6.11:

Error correction code (ECC x 4) and write cycling.

TA = 85 °C,

VCC(min) < VCC < VCC(max)

1,200,000

Table 12. Memory cell data retention

Parameter

Test conditions

Min.

Unit

Data retention(1)

1. The data retention behavior is checked in production, while the 40-year limit is defined from

characterization and qualification results.

TA = 55 °C

Year

Table 13. Capacitance

Symbol

Parameter

Test conditions(1)

1. Sampled only, not 100% tested, at TA = 25 °C and at a frequency of 5 MHz.

Min.

Max.

Unit

COUT

Output capacitance (Q)

VOUT = 0 V

CIN

Input capacitance (D)

VIN = 0 V

Input capacitance (other pins)

VIN = 0 V

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