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AT25QL641 Datasheet(PDF) 70 Page - Renesas Technology Corp |
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AT25QL641 Datasheet(HTML) 70 Page - Renesas Technology Corp |
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70 / 80 page  DS-AT25QL641-130 Rev. G Page 70 Sep 14, 2022 © 2022 Renesas Electronics AT25QL641 Datasheet 9. Electrical Characteristics Figure 65. Power-Up Timing and Voltage Levels Table 20. Absolute Maximum Ratings[1] 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. The Absolute Maximum Ratings are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage extremes referenced in the Absolute Maximum Ratings are intended to accommodate short duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended period of time. Parameter Symbol Conditions Value Units Supply Voltage VCC -0.6 to VCC+0.4 V Voltage Applied to any pin VIO Relative to Ground -0.6 to VCC +0.4 V Transient Voltage on any pin VIOT <20nS Transient Relative to Ground -1.0 V to VCC +1.0 V V Storage temperature TSTG -65 to +150 ˚C Lead temperature TLEAD See Note[2] 2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU. ˚C Electrostatic discharge voltage VESD Human Body Model[3] 3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500Ω). -2000 to +2000 V Table 21. Operating Ranges Parameter Symbols Conditions Min Max Units Supply Voltage VCC fR = 133 MHz (Single/Dual/Quad SPI) fR = 50 MHz (Read Data 03h) 1.7 2.0 V Ambient Operating Temperature TA Industrial -40 +85 oC Table 22. Endurance and Data Retention Parameter Conditions Min Max Units Erase/Program Cycles 4 kB Block, 32/64 kB block, or full chip 100,000 Cycles Data Retention Full Temperature Range 20 Years Table 23. Power-up Timing and Write Inhibit Threshold Parameter Symbol[1] 1. These parameters are characterized at -10C and +85C only Min Max Units VCC (min) to CS low tVSL 10 μs Time Delay before Write Command tPUW 110 ms Write Inhibit Threshold Voltage VWI 1.0 1.4 V |
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