FN3392 Rev.7.00

Page 16 of 16

May 2003

HA5022

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Die Characteristics

DIE DIMENSIONS:

1650

m x 2540m x 483m

METALLIZATION:

Type: Metal 1: AlCu (1%)

Thickness: Metal 1: 8k

Å 0.4kÅ

Type: Metal 2: AlCu (1%)

Thickness: Metal 2: 16k

Å 0.8kÅ

SUBSTRATE POTENTIAL (POWERED UP):

V-

PASSIVATION:

Type: Nitride

Thickness: 4k

Å 0.4kÅ

TRANSISTOR COUNT:

124

PROCESS:

High Frequency Bipolar Dielectric Isolation

Metallization Mask Layout

HA5022

-IN1

V+

OUT1

+IN2

DIS2

V-

NC

OUT2

-IN2

DIS1

+IN1