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SA9503 Datasheet(PDF) 6 Page - NXP Semiconductors |
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SA9503 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 16 page ![]() Philips Semiconductors Objective specification SA9503 Dual-band, CDMA/AMPS LNA and downconverter mixers 1999 Jul 29 6 LNA AC ELECTRICAL CHARACTERISTICS VCC = 2.7 V to 3.3 V; Tamb = 25°C LIMITS PARAMETER TEST CONDITIONS MIN –3 σ TYP +3 σ MAX UNIT Cellular Band LNA RF input frequency range 869 894 MHz S11 50 Ω with external matching –10 dB S22 50 Ω with external matching –15 dB Basic Gain Spread, ∆Gc Common to all cellular modes –1 0 1 dB CEL_L Mode Gain, S21 17 + ∆Gc dB Noise Figure 2.0 2.5 dB Input IP3 2 tones of –30 dBm each, ∆f=800 kHz 4 5.5 dBm 2 tones of –30 dBm each, ∆f=60 kHz 1 2 dBm S12 –40 dB CEL_1 Mode Gain, S21 15.5 + ∆Gc dB Noise Figure 1.6 1.9 dB Input IP3 2 tones of –30 dBm each, ∆f=800 kHz –3 –2 dBm 2 tones of –30 dBm each, ∆f=60 kHz –7 –6 dBm S12 –40 dB CEL_2 Mode Nominal Gain, S21 9 + ∆Gc dB Additional Gain spread Relative to nominal gain –2 2 Noise Figure 1.9 2.2 dB Input IP3 2 tones of –30 dBm each, ∆f=800 kHz –4.5 –3.5 dBm S12 –40 dB CEL_3 Mode Nominal Gain, S21 3 + ∆Gc dB Additional Gain spread Relative to nominal gain –2 2 Noise Figure 4.5 5.5 dB Input IP3 2 tones of –30 dBm each, ∆f=800 kHz 1 2 dBm S12 –40 dB CEL_4 Mode Nominal Gain, S21 –4 + ∆Gc dB Additional Gain spread Relative to nominal gain –2 2 Noise Figure 11 11.5 dB Input IP3 2 tones of –20 dBm each, ∆f=800 kHz 14 15 dBm S12 –33 dB LO (input and output) to LNA input isolation LO single-ended in, differential out, with and without doubler. 0 dBm LO in, (Tx) LO buffer ON, when in active modes. External C ll l d PCS fil d i h 40 dB All modes Cellular and PCS filters connected, with 30 dB LO rejection from them. Settling time Change of mode 100 µs |
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