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FS32K142HAT0MLHT Datasheet(PDF) 25 Page - NXP Semiconductors |
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FS32K142HAT0MLHT Datasheet(HTML) 25 Page - NXP Semiconductors |
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25 / 84 page ![]() 4. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_Standard value given above. 5. For refernce only. Run simulations with the IBIS model and custom board for accurate results. 6. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All other GPIOs are normal drive only. For details see IO Signal Description Input Multiplexing sheet(s) attached with the Reference Manual. 7. When using ENET and SAI on S32K148, the overall device limits associated with high drive pin configurations must be respected i.e. On 144-pin LQFP the general purpose pins: PTA10, PTD0, and PTE4 must be set to low drive. 8. Measured at input V = VSS 9. Measured at input V = VDD 5.4 DC electrical specifications at 5.0 V Range Table 12. DC electrical specifications at 5.0 V Range Symbol Parameter Value Unit Notes Min. Typ. Max. VDD I/O Supply Voltage 4 — 5.5 V Vih Input Buffer High Voltage 0.65 x VDD — VDD + 0.3 V 1 Vil Input Buffer Low Voltage VSS − 0.3 — 0.35 x VDD V 2 Vhys Input Buffer Hysteresis 0.06 x VDD — — V IohGPIO IohGPIO-HD_DSE_0 I/O current source capability measured when pad Voh= (VDD - 0.8 V) 5 — — mA IolGPIO IolGPIO-HD_DSE_0 I/O current sink capability measured when pad Vol= 0.8 V 5 — — mA IohGPIO-HD_DSE_1 I/O current source capability measured when pad Voh = VDD - 0.8 V 20 — — mA 3 IolGPIO-HD_DSE_1 I/O current sink capability measured when pad Vol = 0.8 V 20 — — mA 3 IohGPIO-FAST_DSE_0 I/O current sink capability measured when pad Voh = VDD - 0.8 V 14.0 — — mA 4 IolGPIO-FAST_DSE_0 I/O current sink capability measured when pad Vol= 0.8 V 14.5 — — mA 4 IohGPIO-FAST_DSE_1 I/O current sink capability measured when pad Voh = VDD - 0.8 V 21 — — mA 4 IolGPIO-FAST_DSE_1 I/O current sink capability measured when pad Vol= 0.8 V 20.5 — — mA 4 IOHT Output high current total for all ports — — 100 mA IIN Input leakage current (per pin) for full temperature range at VDD = 5.5 V 5 All pins other than high drive port pins 0.005 0.5 μA High drive port pins 0.010 0.5 μA RPU Internal pullup resistors 20 50 kΩ 6 RPD Internal pulldown resistors 20 50 kΩ 7 1. For reset pads, same Vih levels are applicable 2. For reset pads, same Vil levels are applicable I/O parameters S32K1xx Data Sheet, Rev. 9, 09/2018 NXP Semiconductors 25 |
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