STM32L4S5AI datasheet(211/275 Pages) STMICROELECTRONICS

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STM32L4S5xx, STM32L4S7xx and STM32L4S9xx

Electrical characteristics

250

6.3.26

Temperature sensor characteristics

6.3.27

VBAT monitoring characteristics

Table 84. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

1. Guaranteed by design.

VTS linearity with temperature

±1

±2

°C

Avg_Slope(2)

2. Guaranteed by characterization results.

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(3)

3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to

Table 8: Temperature sensor calibration values.

0.742

0.76

0.785

tSTART

(TS_BUF)(1)

Sensor Buffer Start-up time in continuous

mode(4)

Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power

sleep modes.

µs

tSTART(1)

Start-up time when entering in continuous

mode(4)

120

µs

tS_temp(1)

ADC sampling time when reading the

temperature

µs

IDD(TS)(1)

Temperature sensor consumption from VDD,

when selected by ADC

-4.7

µA

Table 85. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-39

kΩ

QRatio on VBAT measurement

Er(1)

1. Guaranteed by design.

Error on Q

-10

tS_vbat(1)

ADC sampling time when reading the VBAT

µs

Table 86. VBAT charging characteristics

Symbol

Parameter Conditions

Min

Typ

Max

Unit

RBC

Battery

charging

resistor

VBRS = 0

kΩ

VBRS = 1

1.5

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