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STM32L4S5AI Datasheet(PDF) 223 Page - STMicroelectronics

Part # STM32L4S5AI
Description  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150DMIPS, up to 2MB Flash, 640KB SRAM, LCD-TFT & MIPI DSI, AESHASH
PDF  275 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L4S5AI Datasheet(HTML) 223 Page - STMicroelectronics

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STM32L4S5xx, STM32L4S7xx and STM32L4S9xx
Electrical characteristics
250
Figure 43. USB OTG timings – definition of data signal rise and fall time
Table 95. USB OTG electrical characteristics(1)
1. Guaranteed by design
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
trLS
Rise time in LS(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 200 to 600 pF
75
300
ns
tfLS
Fall time in LS(2)
trfmLS
Rise/ fall time matching in LS
tr / tf
80
125
%
trFS
Rise time in FS(2)
CL = 50 pF
420
ns
tfFS
Fall time in FS(2)
CL = 50 pF
trfmFS
Rise/ fall time matching in FS
tr / tf
90
111
%
VCRS
Output signal crossover voltage
(LS/FS)
-1.3
2.0
V
ZDRV
Output driver impedance(3)
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Driving high or low
28
44
Ω
Table 96. USB BCD DC electrical characteristics(1)
Driver characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD(USBBCD)
Primary detection mode
consumption
--
-
300
μA
Secondary detection mode
consumption
--
-
RDAT_LKG
Data line leakage resistance
-
300
-
-
kΩ
VDAT_LKG
Data line leakage voltage
-
0.0
-
3.6
V
RDCP_DAT
Dedicated charging port
resistance across D+/D-
--
-
200
Ω
VLGC_HI
Logic high
-
2.0
-
3.6
V
VLGC_LOW
Logic low
-
-
-
0.8
V
ai14137b
Cross over
points
Differential
data lines
VCRS
VSS
tf
tr



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