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MB85AS12MT Datasheet(PDF) 15 Page - RAMXEED LIMITED |
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MB85AS12MT Datasheet(HTML) 15 Page - RAMXEED LIMITED |
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15 / 27 page ![]() MB85AS12MT DS501-00071-1v1-E 15 ABSOLUTE MAXIMUM RATINGS *:These parameters are based on the condition that VSS is 0 V. WARNING: Semiconductor devices may be permanently damaged by application of stress (including, without limitation, voltage, current or temperature) in excess of absolute maximum ratings. Do not exceed any of these ratings. RECOMMENDED OPERATING CONDITIONS *1: These parameters are based on the condition that VSS is 0 V. *2: Ambient temperature when only this device is working. Please consider it to be the almost same as the package surface temperature. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated under these conditions. Any use of semiconductor devices will be under their recommended operating condition. Operation under any conditions other than these conditions may adversely affect reliability of device and could result in device failure. No warranty is made with respect to any use, operating conditions or combinations not represented on this data sheet. If you are considering application under any conditions other than listed herein, please contact sales representatives beforehand. Parameter Symbol Rating Unit Min Max Power supply voltage* VDD 0.5 4.0 V Input voltage* VIN 0.5 VDD 0.5 ( 4.0) V Output voltage* VOUT 0.5 VDD 0.5 ( 4.0) V Operation ambient temperature TA 40 85 C Storage temperature Tstg 55 125 C Parameter Symbol Value Unit Min Typ Max Power supply voltage*1 VDD 1.6 3.6 V Operation ambient temperature*2 TA 40 85 C |
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