FQP8N60C. datasheet(4/12 Pages) ONSEMI

4 / 12 page

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FQP10N60C / FQPF10N60C Rev C1

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom :

4.5 V

* Notes :

1. 250µs Pulse Test

2. T

= 25°C

, Drain-Source Voltage [V]

-1

150°C

25°C

-55°C

* Notes :

1. V

= 40V

2. 250µs Pulse Test

, Gate-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150°C

* Notes :

1. V

= 0V

2. 250µs Pulse Test

25°C

, Source-Drain voltage [V]

0.0

0.5

1.0

1.5

2.0

= 20V

= 10V

* Note : T

= 25°C

, Drain Current [A]

-1

500

1000

1500

2000

2500

3000

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

* Notes ;

1. V

= 0 V

2. f = 1 MHz

rss

oss

iss

, Drain-Source Voltage [V]

2030

= 300V

= 120V

= 480V

* Note : I

= 9.5A

, Total Gate Charge [nC]

FQP8N60C. Datasheet(PDF) 4 Page - ON Semiconductor

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