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©2003 Fairchild Semiconductor Corporation

FQP10N60C / FQPF10N60C Rev C1

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

TO-220

Tube

N/A

N/A

50 units

Package Marking and Ordering Information

Electrical Characteristics T

C = 25°C unless otherwise noted.

NOTES:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 14.2 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 9.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

TO-220F

Tube

N/A

N/A

50 units

FQP10N60C

FQPF10N60C

FQP10N60C

FQPF10N60C

TO-220F

Tube

N/A

N/A

50 units

FQPF10N60CT

FQPF10N60CT

TO-220F

Tube

N/A

N/A

50 units

FQPF10N60C_F105

FQPF10N60C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

600

--

--

V

∆

BVDSS

/ ∆

TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

--

0.7

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V

--

--

1

µ

A

VDS = 480 V, TC = 125°C

--

--

10

µ

A

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA2.0

--

4.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 4.75 A

--

0.6

0.73

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 4.75 A

--

8.0

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

1570

2040

pF

Coss

Output Capacitance

--

166

215

pF

Crss

Reverse Transfer Capacitance

--

18

24

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 300 V, ID = 9.5A,

RG = 25 Ω

(Note 4)

--

23

55

ns

tr

Turn-On Rise Time

--

69

150

ns

td(off)

Turn-Off Delay Time

--

144

300

ns

tf

Turn-Off Fall Time

--

77

165

ns

Qg

Total Gate Charge

VDS = 480 V, ID = 9.5A,

VGS = 10 V

(Note 4)

--

44

57

nC

Qgs

Gate-Source Charge

--

6.7

--

nC

Qgd

Gate-Drain Charge

--

18.5

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

9.5

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

38

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 9.5 A

--

--

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 9.5 A,

dIF / dt = 100 A/µs

--

420

--

ns

Qrr

Reverse Recovery Charge

--

4.2

--

µ

C