November 2013

©2003 Fairchild Semiconductor Corporation

FQP10N60C / FQPF10N60C Rev C1

www.fairchildsemi.com

1

FQP10N60C / FQPF10N60C

N-Channel QFET® MOSFET

600 V, 9.5 A, 730 mΩ

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology. This advanced technology has

been especially tailored to mini-mize on-state resistance,

provide superior switching perfor-mance, and withstand high

energy pulse in the avalanche and commutation mode.

These devices are well suited for high effi-ciency switched

mode power supplies, active power factor correction,

electronic lamp ballasts based on half bridge topology.

Features

• 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V,

ID = 4.75 A

• Low Gate Charge (Typ. 44 nC)

• Low Crss (Typ. 18 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings T

C = 25

oC unless otherwise noted.

TO-220

GDS

TO-220F

GD

S

G

S

D

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FQP10N60C FQPF10N60C

Unit

VDSS

Drain-Source Voltage

600

V

ID

Drain Current

- Continuous (TC = 25°C)

9.5

9.5 *

A

- Continuous (TC = 100°C)

5.7

5.7 *

A

IDM

Drain Current

- Pulsed

(Note 1)

38

38 *

A

VGSS

Gate-Source Voltage

±

30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

700

mJ

IAR

Avalanche Current

(Note 1)

9.5

A

EAR

Repetitive Avalanche Energy

(Note 1)

15.6

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C)

156

50

W

- Derate above 25°C

1.25

0.4

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQP10N60C FQPF10N60C

Unit

RθJC

Thermal Resistance, Junction-to-Case, Max.

0.8

2.5

°C/W

RθCS

Thermal Resistance, Case-to-Sink, Typ.

0.5

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5

62.5

°C/W