ESMT

AD22650

Elite Semiconductor Memory Technology Inc.

Publication Date: Jan. 2018

Revision: 1.8

4/24

Absolute Maximum Ratings

(1)

SYMBOL

PARAMETER

VALUE

UNIT

Supply Voltage, VDD to GND

-0.3 to 6.0

V

VI

Input Voltage

VSS -0.3 to VDD+0.3

V

RL

Minimum load impedance

16

Ω

EN to GND

-0.3 to VDD+0.3

V

Tstg

Storage temperature range

-65 to 150

℃

TJ

Maximum operating junction temperature range

-40 to 150

℃

(1) The absolute maximum ratings are limiting values of operation, safety of the device cannot be guaranteed if beyond those values.

Recommended Operating Conditions

SYMBOL

PARAMETER

Min

NOM

Max

UNIT

VDD

Supply Voltage

3.0

5.5

V

VIH

High Level Input Voltage

EN

60

% of VDD

VIL

Low Level Input Voltage

EN

40

% of VDD

TA

Operating Ambient Temperature Range

-40

85

℃

RL

Load Resistance

16

Ω

Electrical Characteristics

PVDD=3.3V, TA=25℃, RL=2.5kΩ, CFLY=CPVSS=1μF, CIN=1μF, RI=10kΩ, RF=20kΩ (unless otherwise noted)

SYMBOL

PARAMETER

TEST CONDITIONS

Min

NOM

Max

UNIT

IDD

VDD Supply Current

EN=VDD

7

15

mA

ISD

VDD Shutdown Current

EN=0V, VDD =5.5V

5

μA

II

Input Current

EN pin

0.1

μA

VO

Output Voltage

(Outputs In Phase)

THD+N=1%, VDD=3.3V,

fIN=1kHz

2.2

Vrms

THD+N=1%, VDD=5V, fIN=1kHz

3.4

THD+N=1%, VDD=5V, fIN=1kHz,

RL=100k

3.5

Po

Output Power

(Outputs In Phase)

THD+N=1%, VDD=3.3V,

fIN=1kHz, RL=32Ω

19

mW

THD+N=1%, VDD=5V, fIN=1kHz,

RL=32Ω

53

THD+N=1%, VDD=3.3V,

fIN=1kHz, RL=16Ω

13

THD+N=1%, VDD=5V, fIN=1kHz,

RL=16Ω

38

THD+N

Total Harmonic

Distortion Plus Noise

VO=2Vrms, fIN=1kHz

0.002

%

Po=10mW, fIN=1kHz, RL=32Ω

0.04