ESMT

AD22650

Elite Semiconductor Memory Technology Inc.

Publication Date: Jan. 2018

Revision: 1.8

6/24

Typical Characteristics

PVDD=3.3V, TA=25℃, RL=2.5kΩ, CFLY=CPVSS=1μF, CIN=1μF, RI=10kΩ, RF=20kΩ (unless otherwise noted)

 Total Harmonic Distortion + Noise (THD+N) vs. Output Power

Vo - Output Voltage per channel (V)

100m

200m

500m

800m

1

2

3

5

10

0.1

1

0.01

0.0001

0.001

4

PVDD=3.3V

R =2.5kohm

f =1kHz

L

in

Vo - Output Voltage per channel (V)

100m

200m

500m

800m

1

2

3

5

10

0.1

1

0.01

0.0001

0.001

4

PVDD=5V

R =2.5kohm

f =1kHz

L

in