ESMT

AD22650

Elite Semiconductor Memory Technology Inc.

Publication Date: Jan. 2018

Revision: 1.8

5/24

Electrical Characteristics (Con

’t)

PVDD=3.3V, TA=25℃, RL=2.5kΩ, CFLY=CPVSS=1μF, CIN=1μF, RI=10kΩ, RF=20kΩ (unless otherwise noted)

SYMBOL

PARAMETER

TEST CONDITIONS

Min

NOM

Max

UNIT

THD+N

Total Harmonic

Distortion Plus Noise

Po=10mW, fIN=1kHz, RL=16Ω

0.06

%

Crosstalk

Channel Separation

VO=2Vrms, fIN=1kHz

-110

dB

Po=10mW, fIN=1kHz, RL=32Ω

-74

VN

Output Noise

RI=10k, RF=10k

11

15

μVrms

VOS

Output Offset Voltage

VDD=3V to 5.5V, Input Grounded

-5

5

mV

PSRR

Power Supply Rejection

Ratio

VDD=3V to 5.5V, Vrr=200mVrms,

fIN=1kHz

-80

-60

dB

RI

Input Resistor Range

1

10

47

kΩ

RF

Feedback Resistor

Range

4.7

20

100

kΩ

fCP

Charge-Pump

Frequency

400

500

600

kHz

Maximum capacitive

Load

220

pF

VUVP

External Under Voltage

Detection

1.25

V

IHYS

External Under Voltage

Detection Hysteresis

Current

5

μA

TSD

Over Temperature

Protection Level

150

℃

Tstart-up

Start-up Time

0.5

ms