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DM505LRBABF Datasheet(PDF) 110 Page - Texas Instruments |
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DM505LRBABF Datasheet(HTML) 110 Page - Texas Instruments |
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110 / 295 page ![]() CL= C C f1 2 f (C +C ) 2 f1 f xi_osc1 vssa_osc1 Device xo_osc1 C f1 Crystal Rd C f2 (Optional) SPRS91v_CLK_05 110 DM505 SPRS976E – NOVEMBER 2016 – REVISED MAY 2018 www.ti.com Submit Documentation Feedback Specifications Copyright © 2016–2018, Texas Instruments Incorporated Figure 5-15. Crystal Implementation NOTE The load capacitors, Cf1 and Cf2 in Figure 5-15, should be chosen such that the below equation is satisfied. CL in the equation is the load specified by the crystal manufacturer. All discrete components used to implement the oscillator circuit should be placed as close as possible to the associated oscillator xi_osc1, xo_osc1, and vssa_osc1 pins. Figure 5-16. Load Capacitance Equation The crystal must be in the fundamental mode of operation and parallel resonant. Table 5-20 summarizes the required electrical constraints. Table 5-20. OSC1 Crystal Electrical Characteristics NAME DESCRIPTION MIN TYP MAX UNIT fp Parallel resonance crystal frequency Range from 19.2 to 32 MHz Cf1 Cf1 load capacitance for crystal parallel resonance with Cf1 = Cf2 12 24 pF Cf2 Cf2 load capacitance for crystal parallel resonance with Cf1 = Cf2 12 24 pF ESR(Cf1,Cf2) Crystal ESR 100 Ω CO Crystal shunt capacitance ESR = 30 Ω 19.2 MHz ≤ fp ≤ 32 MHz 7 pF ESR = 40 Ω 19.2 MHz ≤ fp ≤ 32 MHz 5 pF ESR = 50 Ω 19.2 MHz ≤ fp ≤ 25 MHz 7 pF 25 MHz < fp ≤ 27 MHz 5 pF 27 MHz < fp ≤ 32 MHz Not Supported - ESR = 60 Ω 19.2 MHz ≤ fp ≤ 23 MHz 7 pF 23 MHz < fp ≤ 25 MHz 5 pF 25 MHz < fp ≤ 32 MHz Not Supported - ESR = 80 Ω 19.2 MHz ≤ fp ≤ 23 MHz 5 pF 23 MHz < fp ≤ 25 MHz 3 pF 25 MHz < fp ≤ 32 MHz Not Supported - ESR = 100 Ω 19.2 MHz ≤ fp ≤ 20 MHz 3 pF 20 MHz < fp ≤ 32 MHz Not Supported - LM Crystal motional inductance for fp = 20 MHz 10.16 mH CM Crystal motional capacitance 3.42 fF |
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