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S29GL01GS Datasheet(PDF) 20 Page - Infineon Technologies AG |
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S29GL01GS Datasheet(HTML) 20 Page - Infineon Technologies AG |
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20 / 118 page ![]() Datasheet 20 001-98285 Rev. *T 2023-07-17 128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ Flash Parallel, 3.0 V Read operations 4 Read operations 4.1 Asynchronous read Each read access may be made to any location in the memory (random access). Each random access is self-timed with the same latency from CE# or address to valid data (tACC or tCE). 4.2 Page mode read Each random read accesses an entire 32-byte page in parallel. Subsequent reads within the same page have faster read access speed. The page is selected by the higher address bits (A MAX–A4), while the specific word of that page is selected by the least significant address bits A3–A0. The higher address bits are kept constant and only A3–A0 changed to select a different word in the same page. This is an asynchronous access with data appearing on DQ15–DQ0 when CE# remains LOW, OE# remains LOW, and the asynchronous page access time (tPACC) is satisfied. If CE# goes HIGH and returns LOW for a subsequent access, a random read access is performed and time is required (tACC or tCE). |
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