M28W640HCT datasheet(55/72 Pages) NUMONYX

55 / 72 page

M28W640HCT, M28W640HCB

Common Flash interface (CFI)

55/72

Table 27.

CFI query system interface information

Offset

Data

Description

Value

1Bh

0027h

VDD logic supply minimum program/erase or write voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

2.7 V

1Ch

0036h

VDD logic supply maximum Program/Erase or Write voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 mV

3.6 V

1Dh

00B4h

VPP [programming] supply minimum Program/Erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV

11.4 V

1Eh

00C6h

VPP [programming] supply maximum Program/Erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 mV

12.6 V

1Fh

0004h

Typical time-out per single word program = 2n µs

16 µs

20h

0004h

Typical time-out for Double/Quadruple Word Program = 2n µs

16 µs

21h

000Ah

Typical time-out per individual block erase = 2n ms

1 s

22h

0000h

Typical time-out for full chip erase = 2n ms

23h

0005h

Maximum time-out for Word program = 2n times typical

512 µs

24h

0005h

Maximum time-out for Double/Quadruple Word Program = 2n times

typical

512 µs

25h

0003h

Maximum time-out per individual block erase = 2n times typical

8 s

26h

0000h

Maximum time-out for chip erase = 2n times typical

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