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R5F564MFDDFB Datasheet(PDF) 85 Page - Renesas Technology Corp

Part # R5F564MFDDFB
Description  Renesas MCUs
PDF  162 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F564MFDDFB Datasheet(HTML) 85 Page - Renesas Technology Corp

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R01DS0173EJ0120 Rev.1.20
Page 85 of 162
Oct 20, 2022
RX64M Group
2. Electrical Characteristics
2.3.5
Bus Timing
Table 2.23
Bus Timing
Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0,
VCC_USBA = AVCC_USBA = 3.0 to 3.6 V,
VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V,
ICLK = PCLKA = 8 to 120 MHz, PCLKB = BCLK = SDCLK = 8 to 60 MHz, Ta = Topr
Output load conditions: VOH = VCC × 0.5, VOL = VCC × 0.5, C = 30 pF
High-drive output is selected by the driving ability control register.
Item
Symbol
Min.
Max.
Unit
Test Conditions
Address delay time
tAD
—
12.5
ns
Figure 2.16 to
Figure 2.21
Byte control delay time
tBCD
—
12.5
ns
CS# delay time
tCSD
—
12.5
ns
ALE delay time
tALED
—
12.5
ns
RD# delay time
tRSD
—
12.5
ns
Read data setup time
tRDS
12.5
—
ns
Read data hold time
tRDH
0—
ns
WR# delay time
tWRD
—
12.5
ns
Write data delay time
tWDD
—
12.5
ns
Write data hold time
tWDH
0—
ns
WAIT# setup time
tWTS
12.5
—
ns
Figure 2.22
WAIT# hold time
tWTH
0—
ns
Address delay time 2 (SDRAM)
tAD2
1
12.5
ns
Figure 2.23
CS# delay time 2 (SDRAM)
tCSD2
1
12.5
ns
DQM delay time (SDRAM)
tDQMD
1
12.5
ns
CKE delay time (SDRAM)
tCKED
1
12.5
ns
Read data setup time 2 (SDRAM)
tRDS2
10
—
ns
Read data hold time 2 (SDRAM)
tRDH2
0—
ns
Write data delay time 2 (SDRAM)
tWDD2
—
12.5
ns
Write data hold time 2 (SDRAM)
tWDH2
1—
ns
WE# delay time (SDRAM)
tWED
1
12.5
ns
RAS# delay time (SDRAM)
tRASD
1
12.5
ns
CAS# delay time (SDRAM)
tCASD
1
12.5
ns



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