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RZ/G2H Datasheet(PDF) 155 Page - Renesas Technology Corp |
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RZ/G2H Datasheet(HTML) 155 Page - Renesas Technology Corp |
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155 / 169 page  RZ/G Series, 2nd Generation Datasheet Section 3. Electrical Characteristics R01DS0483EJ0101 Rev.1.01 Page 155 of 169 Jun 30, 2025 3.34 GPIO Table 3.34.1 GPIO Module Signal Timing Conditions: VDDQ33 = 3.3 V ± 0.2 V, VDDQVA_SDn = 3.3 V ± 0.2 V / 1.8 V ± 0.1 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N] VDDQ33 = 3.3 V ± 0.3 V, VDD_QSPI = VDDQ_SDn = 3.3 V ± 0.3 V / 1.8 V ± 0.1 V, VDDQ25_AVB0 = 3.3 V ± 0.3 V / 2.5 V ± 0.2 V [RZ/G2E] Tc = −40 to +115 °C [RZ/G2H, RZ/G2M V1.3], Ta = -40 to +85 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E] Item Symbol Min. Typ. Max. Unit Figures GPIO input active width tIOAW 2 — — tGPCYC Figure 3.34.1 Note: tGPCYC: One cycle of the S3D4ϕ clock for RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N, and RZ/G2E. Figure 3.34.1 GPIO signal Timing GPn tIOAW Note: n = 0 to 7 for RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0 and RZ/G2N n = 0 to 6 for RZ/G2E RZ/G2H RZ/G2M V1.3 RZ/G2N RZ/G2E RZ/G2M V3.0 |
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