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TMDS261 Datasheet(PDF) 13 Page - Texas Instruments |
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TMDS261 Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 42 page ![]() SWITCHING CHARACTERISTICS PULSE GENRATOR R T V IN D.U.T. V OUT C =100pF L R =2k L W 5V VCC S0369-02 PULSE GENRATOR R T V IN D.U.T. V OUT C =400pF L R =2k L W 5V VCC S0370-02 TMDS261 www.ti.com............................................................................................................................................................................................ SLLS953 – DECEMBER 2008 over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH1 Propagation delay time, low to high Source to sink 80 251 ns tPHL1 Propagation delay time, high to low Source to sink 35 200 ns tPLH2 Propagation delay time, low to high Sink to source 204 459 ns tPHL2 Propagation delay time, high to low Sink to source 35 200 ns tf1 Output signal fall time Sink side 20 72 ns tf2 Output-signal fall time Source side 20 72 ns fSCL SCL clock frequency for internal register Local I2C 100 kHz tW(L) Clock LOW period for I2C register Local I2C 4.7 µs tW(H) Clock HIGH period for internal register Local I2C 4 µs tSU1 Internal register setup time, SDA to SCL Local I2C 250 ns th(1) Internal register hold time, SCL to SDA Local I2C 0 µs t(buf) Internal register bus free time between STOP and START Local I2C 4.7 µs tsu(2) Internal register setup time, SCL to START Local I2C 4.7 µs th(2) Internal register hold time, START to SCL Local I2C 4 µs tsu(3) Internal register hold time, SCL to STOP Local I2C 4 µs Figure 4. Sink-Side Test Circuit Figure 5. Source-Side Test Circuit Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 13 Product Folder Link(s) :TMDS261 |
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