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BTS6480SF Datasheet(PDF) 20 Page - Infineon Technologies AG |
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BTS6480SF Datasheet(HTML) 20 Page - Infineon Technologies AG |
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20 / 73 page ![]() Data Sheet 20 Rev. 1.0, 2010-04-12 SPOC - BTS6480SF Power Stages 6.3.1 Bulb and LED mode Channel 2 and channel 3 can be configured in bulb and LED mode via the SPI registers HWCR.LEDn. During LED mode following parameters are changed for an optimized functionality with LED loads: On-state resistance R DS(ON), switching timings (tdelay(ON), tdelay(OFF), tON, tOFF), slew rates dV/dtON and dV/dtOFF, current protections IL(trip) and current sense ratio k ILIS. 6.3.2 Switching Resistive Loads When switching resistive loads the following switching times and slew rates can be considered. Figure 7 Switching a Load (resistive) 6.3.3 Switching Inductive Loads When switching off inductive loads with high-side switches, the voltage V OUT drops below ground potential, because the inductance intends to continue driving the current. To prevent the destruction of the device due to high voltages, there is a voltage clamp mechanism implemented, which limits that negative output voltage to a certain level ( V DS(CL) (6.6.2)). See Figure 6 for details. The device provides SmartClamp functionality. To increase the energy capability, the clamp voltage V DS(CL) increases with the junction temperature Tj and load current IL. Please refer also to Section 8.6. The maximum allowed load inductance is limited. 6.4 Inverse Current Behavior During inverse currents ( V OUT > VBB) the affected channel stays in ON- or in OFF-state. Furthermore, during applied inverse currents no ERR-flag is set. The functionality of unaffected channels is not influenced by inverse currents applied to other channels (except effects due to junction temperature increase). Influences on the diagnostic function of unaffected channels are possible only for the current sense ratio, please refer to ∆kILIS(IC) (9.8.3). Note: No protection mechanism like temperature protection or current protection is active during applied inverse currents. Inverse currents cause power losses inside the DMOS, which increase the overall device temperature, which could lead to a switch off of the unaffected channels due to over temperature. VOUT t SwitchOn.emf tON tOFF t 90% of VBB 10% of VBB 70% of VBB dV / dtON 30% of VBB 70% dV / dtOFF 30% tdelay(ON ) tdelay(OFF) IN / OUTx tON(rise) tOFF(fall) |
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