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BTS6480SF Datasheet(PDF) 20 Page - Infineon Technologies AG

Part # BTS6480SF
Description  SPI Power Controller
PDF  73 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS6480SF Datasheet(HTML) 20 Page - Infineon Technologies AG

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Data Sheet
20
Rev. 1.0, 2010-04-12
SPOC - BTS6480SF
Power Stages
6.3.1
Bulb and LED mode
Channel 2 and channel 3 can be configured in bulb and LED mode via the SPI registers HWCR.LEDn. During LED
mode following parameters are changed for an optimized functionality with LED loads: On-state resistance
R
DS(ON), switching timings (tdelay(ON), tdelay(OFF), tON, tOFF), slew rates dV/dtON and dV/dtOFF, current protections IL(trip)
and current sense ratio
k
ILIS.
6.3.2
Switching Resistive Loads
When switching resistive loads the following switching times and slew rates can be considered.
Figure 7
Switching a Load (resistive)
6.3.3
Switching Inductive Loads
When switching off inductive loads with high-side switches, the voltage
V
OUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device due to
high voltages, there is a voltage clamp mechanism implemented, which limits that negative output voltage to a
certain level (
V
DS(CL) (6.6.2)). See Figure 6 for details. The device provides SmartClamp functionality. To increase
the energy capability, the clamp voltage
V
DS(CL) increases with the junction temperature Tj and load current IL.
Please refer also to Section 8.6. The maximum allowed load inductance is limited.
6.4
Inverse Current Behavior
During inverse currents (
V
OUT > VBB) the affected channel stays in ON- or in OFF-state. Furthermore, during
applied inverse currents no ERR-flag is set.
The functionality of unaffected channels is not influenced by inverse currents applied to other channels (except
effects due to junction temperature increase). Influences on the diagnostic function of unaffected channels are
possible only for the current sense ratio, please refer to
∆kILIS(IC) (9.8.3).
Note: No protection mechanism like temperature protection or current protection is active during applied inverse
currents. Inverse currents cause power losses inside the DMOS, which increase the overall device
temperature, which could lead to a switch off of the unaffected channels due to over temperature.
VOUT
t
SwitchOn.emf
tON
tOFF
t
90% of VBB
10% of VBB
70% of VBB
dV /
dtON
30% of VBB
70%
dV /
dtOFF
30%
tdelay(ON )
tdelay(OFF)
IN /
OUTx
tON(rise)
tOFF(fall)



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