STM8S005C6T6 datasheet(90/103 Pages) STMICROELECTRONICS

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Functional EMS (electromagnetic susceptibility)

9.3.12.1

While executing a simple application (toggling 2 LEDs through I/O ports), the product is

stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).

• FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of

the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2

standard.

• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with

the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the table

below based on the EMS levels and classes defined in application note AN1709 (EMC design

guide for STMicrocontrollers).

Designing hardened software to avoid noise problems

9.3.12.2

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

• Corrupted program counter

• Unexpected reset

• Critical data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques

for improving microcontroller EMC performance).

Table 46: EMS data

Level/ class

Conditions

Parameter

Symbol

2/B

(1)

VDD = 5 V, TA = 25 °C, fMASTER = 16 MHz,

conforming to IEC 1000-4-2

Voltage limits to be applied on

any I/O pin to induce a

functional disturbance

VFESD

4/A

(1)

VDD= 5 V, TA = 25 °C ,fMASTER = 16 MHz,conforming

to IEC 1000-4-4

Fast transient voltage burst

limits to be applied through 100

pF on VDD and VSS pins to

induce a functional disturbance

VEFTB

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STM8S005K6 STM8S005C6

Electrical characteristics

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