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GMS81C2012 Datasheet(PDF) 85 Page - Hynix Semiconductor |
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GMS81C2012 Datasheet(HTML) 85 Page - Hynix Semiconductor |
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85 / 107 page ![]() HYUNDAI MicroElectronics GMS81C2012/GMS81C2020 MAR. 2000 Ver 1.00 85 18. OSCILLATOR CIRCUIT The GMS81C20xx has two oscillation circuits internally. XIN and XOUT are input and output for main frequency and SXIN and SXOUT are input and output for sub frequency, respectively, inverting amplifier which can be configured for being used as an on-chip oscillator, as shown in Figure 18-1. Figure 18-1 Oscillation Circuit Oscillation circuit is designed to be used either with a ce- ramic resonator or crystal oscillator. Since each crystal and ceramic resonator have their own characteristics, the user should consult the crystal manufacturer for appropriate values of external components. Oscillation circuit is designed to be used either with a ce- ramic resonator or crystal oscillator. Since each crystal and ceramic resonator have their own characteristics, the user should consult the crystal manufacturer for appropriate values of external components. In addition, see Figure 18-2 for the layout of the crystal. Note: Minimize the wiring length. Do not allow the wiring to intersect with other signal conductors. Do not allow the wir- ing to come near changing high current. Set the potential of the grounding position of the oscillator capacitor to that of VSS. Do not ground it to any ground pattern where high cur- rent is present. Do not fetch signals from the oscillator. Figure 18-2 Layout of Oscillator PCB circuit XOUT XIN VSS Recommend C1,C2 = 20pF C1 C2 XOUT XIN External Clock Open XOUT XIN External Oscillator RC Oscillator (mask option) Crystal or Ceramic Oscillator SXOUT SXIN VSS Recommend C1,C2 = 100~120pF C1 C2 32.768KHz 4.19MHz Crystal Oscillator Ceramic Resonator C1,C2 = 30pF Refer to AC Characteristics For selection R value, REXT XOUT XIN |
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