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AN2503 Datasheet(PDF) 19 Page - STMicroelectronics

Part # AN2503
Description  PDP Power Devices
PDF  30 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2503 Datasheet(HTML) 19 Page - STMicroelectronics

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AN2503
PDP Power Devices characteristics
19/30
Typical voltage requirements for a PDP are:
●
Sustain voltage Vs = 200 V
●
Set voltage Vset= 400 V
●
Reset voltage Vreset= -150 V
4.1.2
Energy recovery section
For Energy recovery circuit, the maximum voltage stress is Vs/2
≈ 100 V, and the current
stress depends on the device. The clamping diodes have to withstand a current lower than
10 A, whilst the ERC switches and the ERC diodes have to be able to handle a resonant
half-sinusoidal current up to 100 A peak.
The typical current waveform in the Energy recovery circuit is shown in Figure 23. The key
parameters of the DERC diode for the energy recovery circuit have been optimized in order
to decrease power losses.
Figure 23.
Inductor current
For ER circuit new devices with low voltage drop and very fast turn ON have been
developed.
●
Energy recovery diodes STTH60P03, STTH40P03
Energy recovery diodes (D1, D3, D5, and D7) have been tailored on this application
optimizing key parameters to reduce power losses [6.], [7.]. They have the ability to handle
large repetitive peak current (Irp), in conjunction with a lower reverse current (IRM) and peak
forward voltage (VFP).
Table 3.
STTH60P03 Features
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IRM
Reverse
recovery current T
j = 100°C
IF = 60 A VR =
100 V
dIF/dt = 200 A/µs
67.5
A
Sfactor
Softness factor
0.5
VFP
Peak forward
voltage
Tj = 25°C
IF = 60 A
dIF/dt = 400 A/µs
2.5
3.5
V
ER C
current
T1
C lam ping
current
T3
D2
D3



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