AN2503 datasheet(20/30 Pages) STMICROELECTRONICS

20 / 30 page

PDP Power Devices characteristics

AN2503

20/30

●

Clamping diodes STTH2003, STTH1003

Diodes D2, D4, D6, and D8 provide additional protection to clamp the voltage on the

inductors [8], [9]. Overvoltage is due to ER diodes reverse current that store energy in the

inductors. The fact that reverse current IRM of ERC diodes stores energy in the inductors

(and can cause overvoltage if we do not use clamping diodes D2, D4, D6, and D8),

demonstrates that the IRM in ERC diodes is a key parameter to take into account. In fact,

IRM causes power losses both in Clamping diodes and Discharge switches.

●

Energy recovery MOSFET ST75N20

T1, T2, T11, and T12 are the power switches used in the Energy recovery circuit. Due to the

reactive nature of the load, the voltage across the power switch falls rapidly followed by a

rapid rise in the current. This explains why a fast turn-ON is needed, and low conduction

losses (low drop) can be achieved only reducing the RDSON. The STW75N20 Power

MOSFET in proprietary STripFETTM technology, thanks to its low RDSON and low gate

charge is perfectly tailored for the application [9.].

4.1.3

Discharge section

When the panel discharges, a sinusoidal shaped current will go through the discharge

switches. The current could reach a peak value higher than 120 A in worst condition (full

white screen), thus low RDSON and fast turn-ON are required.

Maximum voltage stress for discharge circuit is Vs = 200 V

●

Discharge MOSFET STW52NK25Z

The STW52NK25Z Power MOSFET in property superMESHTM technology, and due to its

low RDSON and low gate charge is perfectly tailored on the application [10.].

4.1.4

Path section

For Path circuit, MOSFET is the preferred device since this circuit is required to conduct

current in both directions. The switching frequency is low, and the RMS current through this

Table 4.

Clamping diodes features

P/N

IF [A]

VRRM [V] Trr [ns]

Tj[C]

VF[V]

Package

STTH1003

300

175

0.9

DPAK, TO-220FP, D2PAK

STTH2003

2x10

300

175

DPAK, TO-220FP, D2PAK, TO220

Table 5.

ERC MOSFET features

P/N

VDSS [V]

RDSON[Ω] ID/IDMAX [A]

P [W]

Package

ST75N20

200

0.028

75/300

300

TO-247, TO-220, D2PAK

Table 6.

Sustain MOSFET features

P/N

VDSS [V]

RDSON[Ω] ID/IDMAX [A]

P [W]

Package

P/N

STW52NK25Z

250

0.033

52/208

300

TO-247

STW52NK25Z

STW54NK30Z

300

0.060

54/200

300

TO-247

STW54NK30Z

AN2503 Datasheet(PDF) 20 Page - STMicroelectronics

AN2503 Datasheet(HTML) 20 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

Datasheet Download

Link URL