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AN2344 Datasheet(PDF) 22 Page - STMicroelectronics

Part # AN2344
Description  Power MOSFET avalanche characteristics and ratings
PDF  27 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2344 Datasheet(HTML) 22 Page - STMicroelectronics

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Datasheet avalanche ratings
AN2344
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Figure 18.
STP11NM60FP rectangular pulse superimposition principle graph
The temperature increase due to a finite number of repetitive avalanche phenomena may be
calculated by substituting the Rth of Equation 11 with the Zth calculated at the train pulse
duration
τ :
Equation 29
Other methods may be used. For example, using ‘ti’ as the rise and fall times for each
rectangular power pulse (seeFigure 13.), the TJ may be calculated with the superimposition
principle for each pulse contribution. This method can be used for trains of few pulses. At the
end of the Nth pulse,
Equation 30
However, for a considerably high number of pulses, this equivalent method should be used
to calculate TJ at the Nth avalanche pulse:
Equation 31
This result is to be added (by the superimposition principle) to the temperature increase
due to the conduction and switching losses.
Figure 19.
Equally spaced, same amplitude pulse train timing diagram
T
JC max
()
P
0
t
AV
T
--------Zth
JC τ
()
1
t
AV
T
--------
–

 Zth
JC tAV
()
+


=
∆
T
JC n
() P
0
Zth
JC
ni
–
()Tt
AV
+
() Zth
JC ni
–
()T
–
() )
i1
=
n
∑
=
∆
T
JC n
()
∆
P
0
t
AV
T
--------Zth n
2
–
()Tt
AV
+
()
1
t
AV
T
--------
–

 Zth
JC TtAV
+
() Zth
JC T
()
–
Zth
JC tAV
()
++
=



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