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AN4570 Datasheet(PDF) 24 Page - STMicroelectronics

Part # AN4570
Description  This application note describes how to use the high-density
PDF  46 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4570 Datasheet(HTML) 24 Page - STMicroelectronics

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Interfacing with a non-multiplexed, asynchronous 16-bit SRAM
AN4570
24/46
DocID026804 Rev 1
For read access, DATAST must verify:
DATAST
≥ (tAA + tsu(Data_NE) + tv(A_NE))/tHCLK – ADDSET – 4
Table 6 gives the meanings and values of the SRAM parameters.
Using the above described formulas, the memory timings in Table 6 and the asynchronous
timings in Table 3, we have:
•
Address setup time: 0x0
•
Data setup time: 0x1
3.3
Hardware connection
Table 7 gives the correspondence between SRAM pins and FMC pins and shows the GPIO
configuration for each FMC pin.
In case of an 8-bit SRAM, the data/address bus is 8 bits wide and D8-D15 should not be
connected to the FMC. The unused FMC pins can be used as general purpose I/O pins
Figure 8 shows a typical connection between an STM32F30xxD/E microcontroller and an
IS61WV51216BLL SRAM.
Table 6. IS61WV51216BL SRAM timings
Symbols
Parameter
Value
Unit
tWC
Write cycle time
12
ns
tRC
Read cycle time
12
ns
tPWE1
Write Enable low pulse width
8
ns
tAA
Address access time
12
ns
Table 7. IS61WV51216BLL signal to FMC pin correspondence
Memory
signals
FMC signals
Pin / Port assignment
Pin / Port
configuration
Signal description
A0-A18
A0-A18
Port F/Port G/Port E/
Port D/Port H
AF push-pull
Address A0-A18
I/O0-I/O15
D0-D15
Port D/Port E
AF push-pull
Data D0-D15
CE
NE3
PG10
AF push-pull
Chip Enable
OE
NOE
PD4
AF push-pull
Output Enable
WE
NWE
PD5
AF push-pull
Write Enable
LB
NBL0
PE0
AF push-pull
Lower byte control
UB
NBL1
PE1
AF push-pull
Upper byte control



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