ADS8331IBRGET datasheet(5/57 Pages) TI1

5 / 57 page

ADS8331, ADS8332

www.ti.com

SBAS363D – DECEMBER 2009 – REVISED OCTOBER 2015

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range, unless otherwise noted.

(1)

MIN

MAX

UNIT

INX, MUXOUT, ADCIN, REF+ to AGND

–0.3

VA + 0.3

COM, REF– to AGND

–0.3

0.3

Voltage

VA to AGND

–0.3

VBD to DGND

–0.3

AGND to DGND

–0.3

0.3

Digital input voltage to DGND

–0.3

VBD + 0.3

Digital output voltage to DGND

–0.3

VBD + 0.3

(TJMax –

Power dissipation

4 × 4 QFN-

TA)/RθJA

24 Package

RθJA thermal impedance

°C/W

(TJMax –

Power dissipation

TSSOP-24

TA)/θJA

Package

RθJA thermal impedance

°C/W

Operating free-air temperature, TA

–40

°C

Junction temperature, TJ Max

150

°C

Storage temperature range, Tstg

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V(ESD)

Electrostatic discharge

Charged-device model (CDM), per JEDEC specification JESD22-

±500

C101(2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Analog supply voltage

2.7

3.6

VBD

Digital supply voltage

1.65

VA + 0.2

7.4 Thermal Information

ADS833x

THERMAL METRIC(1)

RGE (VQFN)

PW (TSSOP)

UNIT

24 PINS

RθJA

Junction-to-ambient thermal resistance

31.9

78.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

29.2

12.1

°C/W

RθJB

Junction-to-board thermal resistance

8.7

33.8

°C/W

ψJT

Junction-to-top characterization parameter

0.3

°C/W

ψJB

Junction-to-board characterization parameter

8.7

33.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

2.25

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

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