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TMS320F28374DPTPS Datasheet(PDF) 64 Page - Texas Instruments

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Part # TMS320F28374DPTPS
Description  Dual-Core Delfino Microcontrollers
PDF  212 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TMS320F28374DPTPS Datasheet(HTML) 64 Page - Texas Instruments

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TMS320F28379D, TMS320F28377D
TMS320F28376D, TMS320F28375D, TMS320F28374D
SPRS880F – DECEMBER 2013 – REVISED NOVEMBER 2015
www.ti.com
5.7.4
Flash Parameters
The on-chip flash memory is tightly integrated to the CPU, allowing code execution directly from flash
through 128-bit-wide prefetch reads and a pipeline buffer. Flash performance for sequential code is equal
to execution from RAM. Factoring in discontinuities, most applications will run with an efficiency of
approximately 80% relative to code executing from RAM. This flash efficiency lets designers realize a 2×
improvement in performance when migrating from the previous generation Delfino MCUs.
This device also has an OTP (One-Time-Programmable) sector used for the dual code security module
(DCSM), which cannot be erased after it is programmed.
Table 5-19 shows the minimum required flash wait states at different frequencies. Table 5-20 shows the
flash parameters at 200 MHz. Table 5-21 shows the flash/OTP endurance. Table 5-22 shows the flash
data retention duration.
Table 5-19. Minimum Required Flash Wait States at
Different Frequencies
FLASH WAIT STATES
CPUCLK (MHz)(1)
(MINIMUM REQUIRED RWAIT)
151–200
3
101–150
2
51–100
1
≤50
0
(1)
When using INTOSC (see Table 5-18, Internal Oscillator Electrical
Characteristics) as the PLL clock source, the SYSCLK divided by
RWAIT + 1 should not exceed 50 MHz after accounting for INTOSC
accuracy. For example, instead of configuring the PLL for 100 MHz,
configure it for 97 MHz when using INTOSC.
Table 5-20. Flash Parameters at 200 MHz(1)
PARAMETER
MIN
TYP
MAX
UNIT
128 data bits + 16 ECC bits
40
300
µs
Program Time(2)
8KW sector
90
180
ms
32KW sector
360
720
ms
8KW sector
25
50
Erase Time(3)
ms
at < 25 cycles
32KW sector
30
55
8KW sector
105
4000
Erase Time(3)
ms
at 50k cycles
32KW sector
110
4000
(1)
The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
(2)
Program time includes overhead of the Flash state machine but does not include the time to transfer the following into RAM:
•
Code that uses Flash API to program the Flash
•
Flash API itself
•
Flash data to be programmed
In other words, the time indicated in this table is applicable after all the required code/data is available in the device RAM, ready for
programming. Note that the transfer time will significantly vary depending on the speed of the emulator used.
Program time calculation is based on programming 144 bits at a time at the specified operating frequency. Program time includes
Program verify by the CPU. Note that the program time does not degrade with write/erase (W/E) cycling, but the erase time does.
Erase time includes Erase verify by the CPU and does not involve any data transfer.
(3)
Erase time includes Erase verify by the CPU.
64
Specifications
Copyright © 2013–2015, Texas Instruments Incorporated
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Product Folder Links: TMS320F28379D TMS320F28377D TMS320F28376D TMS320F28375D TMS320F28374D



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