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TMS320F28374DPTPS Datasheet(PDF) 64 Page - Texas Instruments |
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TMS320F28374DPTPS Datasheet(HTML) 64 Page - Texas Instruments |
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64 / 212 page ![]() TMS320F28379D, TMS320F28377D TMS320F28376D, TMS320F28375D, TMS320F28374D SPRS880F – DECEMBER 2013 – REVISED NOVEMBER 2015 www.ti.com 5.7.4 Flash Parameters The on-chip flash memory is tightly integrated to the CPU, allowing code execution directly from flash through 128-bit-wide prefetch reads and a pipeline buffer. Flash performance for sequential code is equal to execution from RAM. Factoring in discontinuities, most applications will run with an efficiency of approximately 80% relative to code executing from RAM. This flash efficiency lets designers realize a 2× improvement in performance when migrating from the previous generation Delfino MCUs. This device also has an OTP (One-Time-Programmable) sector used for the dual code security module (DCSM), which cannot be erased after it is programmed. Table 5-19 shows the minimum required flash wait states at different frequencies. Table 5-20 shows the flash parameters at 200 MHz. Table 5-21 shows the flash/OTP endurance. Table 5-22 shows the flash data retention duration. Table 5-19. Minimum Required Flash Wait States at Different Frequencies FLASH WAIT STATES CPUCLK (MHz)(1) (MINIMUM REQUIRED RWAIT) 151–200 3 101–150 2 51–100 1 ≤50 0 (1) When using INTOSC (see Table 5-18, Internal Oscillator Electrical Characteristics) as the PLL clock source, the SYSCLK divided by RWAIT + 1 should not exceed 50 MHz after accounting for INTOSC accuracy. For example, instead of configuring the PLL for 100 MHz, configure it for 97 MHz when using INTOSC. Table 5-20. Flash Parameters at 200 MHz(1) PARAMETER MIN TYP MAX UNIT 128 data bits + 16 ECC bits 40 300 µs Program Time(2) 8KW sector 90 180 ms 32KW sector 360 720 ms 8KW sector 25 50 Erase Time(3) ms at < 25 cycles 32KW sector 30 55 8KW sector 105 4000 Erase Time(3) ms at 50k cycles 32KW sector 110 4000 (1) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent programming operations. (2) Program time includes overhead of the Flash state machine but does not include the time to transfer the following into RAM: • Code that uses Flash API to program the Flash • Flash API itself • Flash data to be programmed In other words, the time indicated in this table is applicable after all the required code/data is available in the device RAM, ready for programming. Note that the transfer time will significantly vary depending on the speed of the emulator used. Program time calculation is based on programming 144 bits at a time at the specified operating frequency. Program time includes Program verify by the CPU. Note that the program time does not degrade with write/erase (W/E) cycling, but the erase time does. Erase time includes Erase verify by the CPU and does not involve any data transfer. (3) Erase time includes Erase verify by the CPU. 64 Specifications Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: TMS320F28379D TMS320F28377D TMS320F28376D TMS320F28375D TMS320F28374D |
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