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LPC18S50 Datasheet(PDF) 87 Page - NXP Semiconductors

Part # LPC18S50
Description  32-bit ARM Cortex-M3 flashless MCU with security features
PDF  151 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC18S50 Datasheet(HTML) 87 Page - NXP Semiconductors

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LPC18S50_S30_S10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 23 February 2015
87 of 151
NXP Semiconductors
LPC18S50/S30/S10
32-bit ARM Cortex-M3 microcontroller
IDD(IO)
I/O supply current
deep sleep mode
-
1
-
A
power-down mode
-
1
-
A
deep power-down mode
[8] -0.05
-
A
IDDA
Analog supply current
on pin VDDA;
deep sleep mode
[11] -0.4
-
A
power-down mode
[11] -0.4
-
A
deep power-down
mode
[11] -0.007
-
A
RESET,RTC_ALARM, WAKEUPn pins
VIH
HIGH-level input
voltage
[10] 0.8
 (V
ps
0.35)
-5.5
V
VIL
LOW-level input voltage
[10] 0
-
0.3
 (V
ps
0.1)
V
Vhys
hysteresis voltage
[10] 0.05
 (V
ps
 0.35)
--V
VO
output voltage
[10] -Vps - 0.2
-
V
Standard I/O pins - normal drive strength
CI
input capacitance
-
-
2
pF
ILL
LOW-level leakage
current
VI = 0 V; on-chip pull-up
resistor disabled
-3
-nA
ILH
HIGH-level leakage
current
VI =VDD(IO); on-chip
pull-down resistor
disabled
-3
-nA
VI = 5 V
--20
nA
IOZ
OFF-state output
current
VO =0V to VDD(IO);
on-chip pull-up/down
resistors disabled;
absolute value
-3
-nA
VI
input voltage
pin configured to provide
a digital function;
VDD(IO)  2.2 V
0-
5.5
V
VDD(IO) = 0 V
0
-
3.6
V
VO
output voltage
output active
0
-
VDD(IO)
V
VIH
HIGH-level input
voltage
0.7
VDD(IO)
-5.5
V
VIL
LOW-level input voltage
0
-
0.3
VDD(IO)
V
Vhys
hysteresis voltage
0.1
VDD(IO)
--V
VOH
HIGH-level output
voltage
IOH = 6 mA
VDD(IO)
0.4
--V
VOL
LOW-level output
voltage
IOL = 6 mA
--0.4
V
IOH
HIGH-level output
current
VOH =VDD(IO)  0.4 V
6
--mA
Table 10.
Static characteristics …continued
Tamb = 40 C to +85 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit



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