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LPC18S50 Datasheet(PDF) 87 Page - NXP Semiconductors |
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LPC18S50 Datasheet(HTML) 87 Page - NXP Semiconductors |
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87 / 151 page ![]() LPC18S50_S30_S10 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 — 23 February 2015 87 of 151 NXP Semiconductors LPC18S50/S30/S10 32-bit ARM Cortex-M3 microcontroller IDD(IO) I/O supply current deep sleep mode - 1 - A power-down mode - 1 - A deep power-down mode [8] -0.05 - A IDDA Analog supply current on pin VDDA; deep sleep mode [11] -0.4 - A power-down mode [11] -0.4 - A deep power-down mode [11] -0.007 - A RESET,RTC_ALARM, WAKEUPn pins VIH HIGH-level input voltage [10] 0.8 (V ps 0.35) -5.5 V VIL LOW-level input voltage [10] 0 - 0.3 (V ps 0.1) V Vhys hysteresis voltage [10] 0.05 (V ps 0.35) --V VO output voltage [10] -Vps - 0.2 - V Standard I/O pins - normal drive strength CI input capacitance - - 2 pF ILL LOW-level leakage current VI = 0 V; on-chip pull-up resistor disabled -3 -nA ILH HIGH-level leakage current VI =VDD(IO); on-chip pull-down resistor disabled -3 -nA VI = 5 V --20 nA IOZ OFF-state output current VO =0V to VDD(IO); on-chip pull-up/down resistors disabled; absolute value -3 -nA VI input voltage pin configured to provide a digital function; VDD(IO) 2.2 V 0- 5.5 V VDD(IO) = 0 V 0 - 3.6 V VO output voltage output active 0 - VDD(IO) V VIH HIGH-level input voltage 0.7 VDD(IO) -5.5 V VIL LOW-level input voltage 0 - 0.3 VDD(IO) V Vhys hysteresis voltage 0.1 VDD(IO) --V VOH HIGH-level output voltage IOH = 6 mA VDD(IO) 0.4 --V VOL LOW-level output voltage IOL = 6 mA --0.4 V IOH HIGH-level output current VOH =VDD(IO) 0.4 V 6 --mA Table 10. Static characteristics …continued Tamb = 40 C to +85 C unless otherwise specified. Symbol Parameter Conditions Min Typ[1] Max Unit |
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