R5F11BLE datasheet(134/143 Pages) RENESAS

134 / 143 page

RL78/G1F

3. ELECTRICAL SPECIFICATIONS (G: TA = -40 to +105°C)

R01DS0246EJ0110 Rev. 1.10

Page 134 of 140

Aug 12, 2016

Note 1.

1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite.

Note 2.

When using flash memory programmer and Renesas Electronics self-programming library

Note 3.

These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics

Corporation.

3.9

Dedicated Flash Memory Programmer Communication (UART)

Number of code flash rewrites

Notes 1, 2, 3

Cerwr

Retained for 20 years

TA = 85°C

1,000

Times

Number of data flash rewrites

Notes 1, 2, 3

Retained for 1 year

TA = 25°C

1,000,000

Retained for 5 years

TA = 85°C

100,000

Retained for 20 years

TA = 85°C

10,000

(TA = -40 to +105°C, 2.4 V

≤ EVDD0 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Transfer rate

During serial programming

115,200

1,000,000 bps

(TA = -40 to +105°C, 2.4 V

≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

R5F11BLE Datasheet(PDF) 134 Page - Renesas Technology Corp

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