´

´

³

³

p ´

´

SW

OUT

SW

OUT

20 mV

f

L

3

ESR

or

ESR

V

2

f

C

1

2

3

4

15

14

13

12

VTTSNS

U1

TPS51216RUK

VLDOIN

VTT

VTTGND

VBST

DRVH

SW

V5IN

5

11

VTTREF

DRVL

10

9

8

7

6

16

17

18

19

20

21

C6

1 mF

UDG-10165

C7

0.1 mF

C8

10 mF

C9

10 mF

C10

10 mF

V

IN

8 V to 20 V

PGND

R6

0 W

C5

0.1 mF

R7 0 W

L1

0.56 mH

Q2

FDMS8670AS

Q3

FDMS8670AS

C11

330 mF

VDDQ_GND

PGND

AGND

R5

49 kW

R4

10 kW

C3

0.1 mF

C4

10 nF

C2

0.22 mF

C1

10 mF

C12

10 mF

PGND

VTT

0.75 V/2 A

VTTREF

0.75 V

VTTGND

S5

S3

R1

100 kW

R2 200 kW

R3 36 kW

V5IN

4.5 V to 5.5 V

Q1

FDMS8680

VDDQ

1.5 V/20 A

AGND

PGND

TPS51216

SLUSAB9A – NOVEMBER 2010 – REVISED APRIL 2013

www.ti.com

TPS51216 Application Circuit

Figure 33. DDR3, 400-kHz Application Circuit, Tracking Discharge

Table 3. DDR3, 400-kHz Application Circuit, List of Materials

REFERENCE

QTY

SPECIFICATION

MANUFACTURE

PART NUMBER

DESIGNATOR

C8, C9, C10

3

10 µF, 25 V

Taiyo Yuden

TMK325BJ106MM

C11

1

330 µF, 2V, 6 m

Ω

Panasonic

EEFSX0D331XE

L1

1

0.56 µH, 21 A, 1.56 m

Ω

Panasonic

ETQP4LR56WFC

Q1

1

30 V, 35 A, 8.5 m

Ω

Fairchild

FDMS8680

Q2, Q3

2

30 V, 42 A, 3.5 m

Ω

Fairchild

FDMS8670AS

For this example, the bulk output capacitor ESR requirement for D-CAP™ mode is described in Equation 12,

whichever is greater.

(12)

22

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