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TMS320VC5503 Datasheet(PDF) 81 Page - Texas Instruments |
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TMS320VC5503 Datasheet(HTML) 81 Page - Texas Instruments |
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81 / 123 page ![]() Electrical Specifications 81 April 2004 − Revised January 2005 SPRS245C 5.7.2 Synchronous DRAM (SDRAM) Timings Table 5−9 and Table 5−10 assume testing over recommended operating conditions (see Figure 5−8 through Figure 5−14). Table 5−9. Synchronous DRAM Cycle Timing Requirements NO. CVDD = 1.2 V CVDD = 1.35 V CVDD = 1.6 V UNIT NO. MIN MAX MIN MAX UNIT M19 tsu(DV-CLKMEMH) Setup time, read data valid before CLKMEM high 3 3 ns M20 th(CLKMEMH-DV) Hold time, read data valid after CLKMEM high 2 2 ns M21 tc(CLKMEM) Cycle time, CLKMEM 9.26† 7.52‡ ns † Maximum SDRAM operating frequency = 108 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC board design and the memory chip timing requirement. ‡ Maximum SDRAM operating frequency = 133 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC board design and the memory chip timing requirement. Table 5−10. Synchronous DRAM Cycle Switching Characteristics NO. PARAMETER CVDD = 1.2 V CVDD = 1.35 V CVDD = 1.6 V UNIT NO. PARAMETER MIN MAX MIN MAX UNIT M22 td(CLKMEMH-CEL) Delay time, CLKMEM high to CEx low 1.2 7 1.2 5 ns M23 td(CLKMEMH-CEH) Delay time, CLKMEM high to CEx high 1.2 7 1.2 5 ns M24 td(CLKMEMH-BEV) Delay time, CLKMEM high to BEx valid 1.2 7 1.2 5 ns M25 td(CLKMEMH-BEIV) Delay time, CLKMEM high to BEx invalid 1.2 7 1.2 5 ns M26 td(CLKMEMH-AV) Delay time, CLKMEM high to address valid 1.2 7 1.2 5 ns M27 td(CLKMEMH-AIV) Delay time, CLKMEM high to address invalid 1.2 7 1.2 5 ns M28 td(CLKMEMH-SDCASL) Delay time, CLKMEM high to SDCAS low 1.2 7 1.2 5 ns M29 td(CLKMEMH-SDCASH) Delay time, CLKMEM high to SDCAS high 1.2 7 1.2 5 ns M30 td(CLKMEMH-DV) Delay time, CLKMEM high to data valid 1.2 7 1.2 5 ns M31 td(CLKMEMH-DIV) Delay time, CLKMEM high to data invalid 1.2 7 1.2 5 ns M32 td(CLKMEMH-SDWEL) Delay time, CLKMEM high to SDWE low 1.2 7 1.2 5 ns M33 td(CLKMEMH-SDWEH) Delay time, CLKMEM high to SDWE high 1.2 7 1.2 5 ns M34 td(CLKMEMH-SDA10V) Delay time, CLKMEM high to SDA10 valid 1.2 7 1.2 5 ns M35 td(CLKMEMH-SDA10IV) Delay time, CLKMEM high to SDA10 invalid 1.2 7 1.2 5 ns M36 td(CLKMEMH-SDRASL) Delay time, CLKMEM high to SDRAS low 1.2 7 1.2 5 ns M37 td(CLKMEMH-SDRASH) Delay time, CLKMEM high to SDRAS high 1.2 7 1.2 5 ns M38 td(CLKMEMH–CKEL) Delay time, CLKMEM high to CKE low 1.2 7 1.2 5 ns M39 td(CLKMEMH–CKEH) Delay time, CLKMEM high to CKE high 1.2 7 1.2 5 ns |
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