NT5CC64M16GP-DINA datasheet(86/160 Pages) NANYA

86 / 160 page

Version 2.2

Nanya Technology Cooperation ©

04/2019

NTC Proprietary

Level: Property

DDR3(L) 1Gb SDRAM

NT5CB(C)128M8GN / NT5CB(C)64M16GP

Absolute Maximum Ratings

Absolute Maximum DC Ratings

Symbol

Parameter

Rating

Unit

Note

VDD

Voltage on VDD pin relative to Vss

-0.4 V ~ 1.80 V

1,3

VDDQ

Voltage on VDDQ pin relative to Vss

-0.4 V ~ 1.80 V

1,3

Vin, Vout

Voltage on any pin relative to Vss

-0.4 V ~ 1.80 V

Tstg

Storage Temperature

-55 ~ 150

C

1,2

Note:

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.

3. VDD and VDDQ must be within 300mV of each other at all times; and Vref must be not greater than 0.6VDDQ, when VDD and

VDDQ are less than 500mV; Vref may be equal to or less than 300mV.

Refresh parameters by device density

Parameter

Symbol

1Gb

Unit

REF command to ACT or REF command time

tRFC

110

NT5CC64M16GP-DINA Datasheet(PDF) 86 Page - Nanya Technology Corporation.

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