NT5CC64M16GP-DINA datasheet(42/160 Pages) NANYA

42 / 160 page

Version 2.2

Nanya Technology Cooperation ©

04/2019

NTC Proprietary

Level: Property

DDR3(L) 1Gb SDRAM

NT5CB(C)128M8GN / NT5CB(C)64M16GP

DRAM setting for write leveling and DRAM termination unction in that mode

DRAM enters into Write level

ing mode if A7 in MR1 set “High” and after finishing leveling, DRAM exits from write leveling

mode if A7 in MR1 set “Low”. Note that in write leveling mode, only DQS/ terminations are activated and deactivated

via ODT pin not like normal operation.

MR setting involved in the leveling procedure

Function

MR1

Enable

Disable

Write leveling enable

Output buffer mode (Qoff)

A12

DRAM termination function in the leveling mode

ODT pin at DRAM

DQS/

 termination

DQs termination

De-asserted

off

Asserted

off

Note: In write leveling mode with its output buffer disabled (MR1[bit7]=1 with MR1[bit12]=1) all RTT_Nom settings are allowed; in Write

Leveling Mode with its output buffer enabled (MR1[bit7]=1 with MR1[bit12]=0) only RTT_Nom settings of RZQ/2, RZQ/4, and RZQ/6 are

allowed.

Procedure Description

Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling mode, the

DQ pins are in undefined driving mode. During write leveling mode, only NOP or Deselect commands are allowed. As well

as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the output of other rank

must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT after tMOD, time at which DRAM is ready to

accept the ODT signal.

Controller may drive DQS low and

 high after a delay of tWLDQSEN, at which time DRAM has applied on-die

termination on these signals. After tDQSL and tWLMRD controller provides a single DQS,

edge which is used by the

DRAM to sample CK

–

 driven from controller. tWLMRD (max) timing is controller dependent.

DRAM samples CK -



status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after

tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read strobes

(DQS/DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or decrement DQS

–



delay setting and launches the next DQS/

 pulse after some time, which is controller dependent. Once a 0 to 1

transition is detected, the controller locks DQS

–

 delay setting and write leveling is achieved for the device. The

following figure describes the timing diagram and parameters for the overall Write leveling procedure.

NT5CC64M16GP-DINA Datasheet(PDF) 42 Page - Nanya Technology Corporation.

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