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NT5CC64M16GP-DINA Datasheet(PDF) 143 Page - Nanya Technology Corporation.

Part # NT5CC64M16GP-DINA
Description  Commercial, Industrial and AutomotiveDDR3(L) 1 Gb SDRAM
PDF  160 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5CC64M16GP-DINA Datasheet(HTML) 143 Page - Nanya Technology Corporation.

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Version 2.2
143
Nanya Technology Cooperation ©
04/2019
All Rights Reserved.
NTC Proprietary
Level: Property
DDR3(L) 1Gb SDRAM
NT5CB(C)128M8GN / NT5CB(C)64M16GP
Parameter
Symbol
DDR3(L)-1600
DDR3(L)-1866
DDR3-2133
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Data Strobe Timing
DQS and
 low-impedance time
(Referenced from RL
– 1)
tLZ(DQS)
-450
225
-390
195
-360
180
ps
DQS and
 high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
225
-
195
-
180
ps
DQS,
 differential input low pulse width tDQSL
0.45
0.55
0.45
0.55
0.45
0.55
tCK(avg)
DQS,
 differential input high pulse width tDQSH
0.45
0.55
0.45
0.55
0.45
0.55
tCK(avg)
DQS,
 rising edge to CK,  rising edge tDQSS
-0.27
0.27
-0.27
0.27
-0.27
0.27
tCK(avg)
DQS,
 falling edge setup time to
CK,
 rising edge
tDSS
0.18
-
0.18
-
0.18
-
tCK(avg)
DQS,
 falling edge hold time from
CK,
 rising edge
tDSH
0.18
-
0.18
-
0.18
-
tCK(avg)
Command and Address Timing
DLL locking time
tDLLK
512
-
512
-
512
-
nCK
Internal READ Command to
PRECHARGE Command delay
tRTP
tRTPmin.: max(4tCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4tCK, 7.5ns)
tWTRmax.: -
WRITE recovery time
tWR
15
-
15
-
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
4
-
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12tCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
Refer to
“FundamentalAC Specifications”
PRE command period
tRP
ACT to ACT or REF command period
tRC
ACTIVE to PRECHARGE command period
tRAS
A to A command delay
tCCD
4
-
4
-
4
-
nCK
Auto precharge write recovery + precharge
time
tDAL(MIN)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
1
-
1
-
nCK
ACTIVE to ACTIVE command period (1KB
page size)
tRRD
max(4tCK
,6ns)
-
max(4tCK
,5ns)
-
max(4tCK
,5ns)
-
ACTIVE to ACTIVE command period (2KB
page size)
tRRD
max(4tCK
,7.5ns)
-
max(4tCK
,6ns)
-
max(4tCK
,6ns)
-
Four activate window (1KB page size)
tFAW
30
-
27
-
25
-
ns
Four activate window (2KB page size)
tFAW
40
-
35
-
35
-
ns
Command and Address setup time to CK,
 referenced to Vih(ac) / Vil(ac) levels
tIS(BASE)
DDR3-1600
(AC175)
DDR3-1866/
2133(AC150)
45
-
-
-
-
-
ps
tIS(BASE)
DDR3-1600
(AC150)
DDR3-1866/
2133(AC125)
170
-
150
-
135
-
ps
tIS(BASE)
DDR3L
(AC160)
60
-
-
-
-
ps
tIS(BASE)
DDR3L
(AC135)
185
-
65
-
-
-
ps
tIS(BASE)
DDR3L
(AC125)
-
-
150
-
-
-
ps
Command and Address hold time from CK,
 referenced to Vih(dc) / Vil(dc) levels
tIH(BASE)
DDR3
DC100
120
-
100
-
95
-
ps
tIH(BASE)
DDR3L
DC90
130
-
110
-
-
-
ps
Control and Address Input pulse width for
each input
tIPW
560
-
535
-
470
-
ps



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