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TPS7A2033PDBVR Datasheet(PDF) 11 Page - Texas Instruments

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Part # TPS7A2033PDBVR
Description  TPS7A20 300-mA, Ultra-Low-Noise, Low-IQ, High PSRR LDO
PDF  28 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS7A2033PDBVR Datasheet(HTML) 11 Page - Texas Instruments

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VOUT(NOM)
0 V
0 mA
VOUT
VFOLDBACK
ICL
ISC
IRATED
IOUT
Brickwall
Foldback
11
TPS7A20
www.ti.com
SBVS338A – MARCH 2020 – REVISED MARCH 2020
Product Folder Links: TPS7A20
Submit Documentation Feedback
Copyright © 2020, Texas Instruments Incorporated
Feature Description (continued)
Figure 3 shows a diagram of the foldback current limit.
Figure 3. Foldback Current Limit
7.3.5 Undervoltage Lockout (UVLO)
The device has an independent undervoltage lockout (UVLO) circuit that monitors the input voltage, allowing a
controlled and consistent turn on and off of the output voltage. To prevent the device from turning off if the input
drops during turn on, the UVLO has hysteresis as specified in the Electrical Characteristics table.
7.3.6 Thermal Shutdown
The device contains a thermal shutdown protection circuit to disable the device when the junction temperature
(TJ) of the pass transistor rises to TSD(shutdown) (typical). Thermal shutdown hysteresis assures that the device
resets (turns on) when the temperature falls to TSD(reset) (typical).
The thermal time-constant of the semiconductor die is fairly short, thus the device may cycle on and off when
thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high
from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output
capacitors. Under some conditions, the thermal shutdown protection disables the device before startup
completes.
For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating
Conditions table. Operation above this maximum temperature causes the device to exceed its operational
specifications. Although the internal protection circuitry of the device is designed to protect against thermal
overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device
into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.
7.3.7 Active Discharge
The device has an internal pulldown MOSFET that connects an RPULLDOWN resistor to ground when the device is
disabled to actively discharge the output voltage. The active discharge circuit is activated by the enable pin or by
the undervoltage lockout (UVLO).



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