FS32K148HEX0MLFT datasheet(31/101 Pages) NXP

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5.4 DC electrical specifications at 5.0 V Range

Table 19. DC electrical specifications at 5.0 V Range for S32K1xx series

Symbol

Parameter

Value

Unit

Notes

Min.

Typ.

Max.

VDD

I/O Supply Voltage

—

5.5

Vih

Input Buffer High Voltage

0.65 x

VDD

—

VDD + 0.3

Vil

Input Buffer Low Voltage

VSS − 0.3

—

0.35 x VDD

Vhys

Input Buffer Hysteresis

0.06 x

VDD

—

IohGPIO

IohGPIO-HD_DSE_0

I/O current source capability measured

when pad Voh= (VDD - 0.8 V)

—

IolGPIO

IolGPIO-HD_DSE_0

I/O current sink capability measured

when pad Vol= 0.8 V

—

IohGPIO-HD_DSE_1

I/O current source capability measured

when pad Voh = VDD - 0.8 V

—

IolGPIO-HD_DSE_1

I/O current sink capability measured

when pad Vol = 0.8 V

—

IohGPIO-FAST_DSE_0

I/O current sink capability measured

when pad Voh = VDD - 0.8 V

14.0

—

IolGPIO-FAST_DSE_0

I/O current sink capability measured

when pad Vol= 0.8 V

14.5

—

IohGPIO-FAST_DSE_1

I/O current sink capability measured

when pad Voh = VDD - 0.8 V

—

IolGPIO-FAST_DSE_1

I/O current sink capability measured

when pad Vol= 0.8 V

20.5

—

IOHT

Output high current total for all ports

—

100

IIN

Input leakage current (per pin) for full

temperature range at VDD = 3.3 V

5005

All pins other than high drive port pins

0.005

0.5

μA

High drive port pins (excluding XTAL

pin)

0.010

0.5

μA

RPU

Internal pullup resistors

kΩ

RPD

Internal pulldown resistors

kΩ

1. For reset pads, same Vih levels are applicable

2. For reset pads, same Vil levels are applicable

3. The strong pad I/O pin is capable of switching a 50 pF load up to 40 MHz.

4. For refernce only. Run simulations with the IBIS model and custom board for accurate results.

5. Typical leakage is given at room temperature. Maximum is given for 125°C. Leakage numbers increase with temperature,

approximately every 12 – 14°C the value doubles. Leakage is tested at hot temperature. We ensure maximums are not

exceeded. Please note that when the ADC module samples a pin, additional currents beyond the leakage number are

drawn to charge the sample and hold capacitances and internal analog busses. These are difficult to predict

6. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All

other GPIOs are normal drive only. For details see IO Signal Description Input Multiplexing sheet(s) attached with the

Reference Manual.

I/O parameters

S32K1xx Data Sheet, Rev. 14, 08/2021

NXP Semiconductors

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