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FS32K148HEX0MLFT Datasheet(PDF) 45 Page - NXP Semiconductors |
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FS32K148HEX0MLFT Datasheet(HTML) 45 Page - NXP Semiconductors |
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45 / 101 page  Table 35. Flash command timing specifications for S32K14x series (continued) Symbol Description1 S32K142 S32K144 S32K146 S32K148 Typ Max Typ Max Typ Max Typ Max Unit Notes setting (32-bit write complete, ready for next 32-bit write) Last (Nth) 32-bit write (time for write only, not cleanup) 200 550 200 550 200 550 200 550 tquickwrClnup Quick Write Cleanup execution time — — (# of Quick Writes ) * 2.0 — (# of Quick Writes ) * 2.0 — (# of Quick Writes ) * 2.0 — (# of Quick Writes ) * 2.0 ms 7 1. All command times assumes 25 MHz or greater flash clock frequency (for synchronization time between internal/external clocks). 2. Maximum times for erase parameters based on expectations at cycling end-of-life. 3. For all EEPROM Emulation terms, the specified timing shown assumes previous record cleanup has occurred (tquickwrClnup). This may be verified by executing FCCOB Command 0x77, and checking FCCOB number 5 contents show 0x00 - No EEPROM issues detected. 4. 1st time EERAM writes after a Reset or SETRAM may incur additional overhead for EEE cleanup, resulting in up to 2× the times shown. 5. Only after the Nth write completes will any data be valid. Emulated EEPROM record scheme cleanup overhead may occur after this point even after a brownout or reset. If power on reset occurs before the Nth write completes, the last valid record set will still be valid and the new records will be discarded. 6. Quick Write times may take up to 550 µs, as additional cleanup may occur when crossing sector boundaries. 7. Time for emulated EEPROM record scheme overhead cleanup. Automatically done after last (Nth) write completes, assuming still powered. Or via SETRAM cleanup execution command is requested at a later point. Table 36. Flash command timing specifications S32K142W S32K144W Symbol Description-1 Typ Max Typ Max Unit Notes trd1blk Read 1 Block execution time 64 KB flash — 0.8 — 0.8 ms 256 KB flash — 2.5 — — 512 KB flash — — — 2.6 trd1sec Read 1 Section execution time 2 KB flash — 200 — 200 µs 4 KB flash — 220 — 220 tpgmchk Program Check execution time — — 200 — 200 µs tpgm8 Program Phrase execution time — 150 330 150 330 µs tersblk Erase Flash Block execution time 64 KB flash 100 1100 100 1100 ms -1 256 KB flash 350 4400 — — 512 KB flash — — 700 8600 tersscr Erase Flash Sector execution time — 20 275 20 275 ms -1 tpgmsec Program Section execution time 1 KB flash 7 — 7 — ms trd1all Read 1s All Block execution time — — 3.5 — 3.5 ms Table continues on the next page... Memory and memory interfaces S32K1xx Data Sheet, Rev. 14, 08/2021 NXP Semiconductors 45 |
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