FS32K148HEX0MLFT datasheet(49/101 Pages) NXP

49 / 101 page

6. Quick Write times may take up to 550 µs, as additional cleanup may occur when crossing sector boundaries.

7. Time for emulated EEPROM record scheme overhead cleanup. Automatically done after last (Nth) write completes,

assuming still powered. Or via SETRAM cleanup execution command is requested at a later point.

NOTE

Under certain circumstances FlexMEM maximum times may be

exceeded. In this case the user or application may wait, or assert

reset to the FTFC/FTFM macro to stop the operation.

6.3.1.2 Reliability specifications

Table 38. NVM reliability specifications

Symbol

Description

Min.

Typ.

Max.

Unit

Notes

When using as Program and Data Flash

tnvmretp1k

Data retention after up to 1 K cycles

—

years

nnvmcycp

Cycling endurance

1 K

—

cycles

2, 3

When using FlexMemory feature : FlexRAM as Emulated EEPROM

tnvmretee100 Data retention up to 100% of write endurance

—

years

1, 4

tnvmretee10

Data retention up to 10% of write endurance

—

years

nnvmwree16

nnvmwree256

Write endurance

• EEPROM backup to FlexRAM ratio = 16

• EEPROM backup to FlexRAM ratio = 256

100 K

1.6 M

—

writes

5, 6, 7

1. Data retention period per block begins upon initial user factory programming or after each subsequent erase.

2. Program and Erase for PFlash and DFlash are supported across product temperature specification.

3. Cycling endurance is per DFlash or PFlash Sector.

4. Background maintenance operations during normal FlexRAM usage extend effective data retention life beyond 5 years.

5. FlexMemory write endurance specified for 32-bit writes to FlexRAM and is supported across product temperature

specification. Greater write endurance may be achieved with larger ratios of EEPROM backup to FlexRAM.

6. For usage of any emulated EEPROM driver other than the FlexMemory feature, the endurance spec will fall back to the

specified endurance value of the DFlash specification (1K).

7. FlexMemory calculator tool is available at NXP web site for help in estimation of the maximum write endurance achievable

at specific EEPROM/FlexRAM ratios. The "In Spec" portions of the online calculator refer to the NVM reliability

specifications section of data sheet. This calculator only applies to the FlexMemory feature.

6.3.2 QuadSPI AC specifications

The following table describes the QuadSPI electrical characteristics.

• Measurements are with maximum output load of 25 pF, input transition of 1 ns and

pad configured with fastest slew settings (DSE = 1'b1).

• I/O operating voltage ranges from 2.97 V to 3.6 V

• While doing the mode transition (RUN -> HSRUN or HSRUN -> RUN ), the

interface should be OFF.

• Add 50 ohm series termination on board in QuadSPI SCK for Flash A to avoid loop

back reflection when using in Internal DQS (PAD Loopback) mode.

• QuadSPI trace length should be 3 inches.

Memory and memory interfaces

S32K1xx Data Sheet, Rev. 14, 08/2021

NXP Semiconductors

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