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M5M29KB Datasheet(PDF) 15 Page - Renesas Technology Corp

Part # M5M29KB
Description  CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
PDF  32 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

M5M29KB Datasheet(HTML) 15 Page - Renesas Technology Corp

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M5M29KB/T331AVP
Renesas LSIs
Rev.1.0_48a_bezz
15
33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
AC electrical characteristics
(Ta=-40 ~85
°C and Flash VCC=3.0V~3.6V, unless otherwise noted)
-Timing measurements are made under AC waveforms for read operations.
Read Only Mode
Min.
Typ.
Max.
tRC
tAVAV
Read Cycle Time
70
ns
ta(AD)
tAVQV
Address Access Time
70
ns
ta(CE)
tELQV
Chip Enable Access Time
70
ns
ta(OE)
tGLQV
Output Enable Access Time
30
ns
ta(PAD)
Page Read Access Time (after 2nd access)
25
ns
tCEPH
CE# "H"Pulse width
30
ns
tCLZ
tELQX
Chip Enable to Output in Low-Z
0
ns
tDF(CE)
tEHQZ
Chip Enable High to Output in High-Z
25
ns
tOLZ
tGLQX
Output Enable to Output in Low-Z
0
ns
tDF(OE)
tGHQZ
Output Enable to High to Output in High-Z
25
ns
tPHZ
tPLQZ
RP# Low to Output High-Z
150
ns
ta(BYTE)
tFL/HQV
BYTE# access time
70
ns
tBHZ
tFLQZ
BYTE# low to output high-Z
25
ns
tOH
tOH
Output Hold from CE#, OE# and Address
0
ns
tBCD
tELFL/H
CE# low to BYTE# high or low
5
ns
tBAD
tAVFL/H
Address to BYTE# high or low
5
ns
tOEH
tWHGL
OE# Hold from WE# High
10
ns
tPS
tPHEL
RP# Recovery to CE# Low
150
ns
Symbol
Parameter
Limits
Units
Flash VCC=3.0-3.6V



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