M5M29KB datasheet(3/32 Pages) RENESAS

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M5M29KB/T331AVP

Renesas LSIs

Rev.1.0_48a_bezz

33,554,432-BIT (4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT)

CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

The 32M-bit DINOR IV(Divided bit line NOR IV) Flash

Memory is 3.3V-only high speed 33,554,432-bit CMOS

boot block Flash Memory. Alternating BGO(Back Ground

Operation) feature of the device allows Program or Erase

operations to be performed in one bank while the device

simultaneously allows Read operations to be performed

on the other bank. This BGO feature is suitable for

communication products and cellular phone.The Flash

Memory is fabricated by CMOS technology for the

peripheral circuits and DINOR IV architecture for the

memory cells.

Features

-Organization

2,097,152-word x 16-bit

4,194,304-byte x 8-bit

- Supply Voltage

VCC = 3.0 ~ 3.6V

- Access time

Random Access

70ns(Max.)

Random Page Read

25ns(Max.)

- Read

108mW (Max. at 5MHz)

- Page Read

36mW (Max.)

(After Automatic Power Down)

0.33µW(typ.)

- Program/Erase

126mW(Max.)

Standby

0. 33µW(typ.)

Deep Power Down mode

0. 33µW(typ.)

- Auto Program for Bank(I) – Bank(IV)

Program Time

Word Program

30µs/word(typ.)

Byte Program

30µs/byte(typ.)

Page Program

4ms(typ.)

Program Unit

Word/Byte Program

1word/ 1Byte

Page Program

128 words/ 256 bytes

- Auto Erase

Erase time

Main Block

150ms/block (typ.)

Erase unit

Bank(I)

Boot Block

4K-word x2/ 8K-byte x2

Parameter Block 4K-word x6 / 8K-byte x6

Main Block

32K-word x7 / 64K-byte x7

Bank(II)

Main Block

32K-word x8 / 64K-byte x8

Bank(III)

Main Block

32K-word x24 / 64K-byte x24

Bank(IV)

Main Block

32K-word x24 / 64K-byte x24

- Program/Erase cycles

100Kcycles

- Boot Block

Bottom Boot

M***B33******

Top Boot

M***T33******

- The Other Functions

Software Command Control

Software Lock Release(while WP# is low)

Erase Suspend/Resume

Program Suspend/Resume

Status Register Read

Alternating Back Ground Program/Erase Operation

Between Bank(I), Bank(II), Bank(III) and Bank(IV)

Random Page Read

Flash Memory Part

Description

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