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S71GS256 Datasheet(PDF) 108 Page - SPANSION |
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S71GS256 Datasheet(HTML) 108 Page - SPANSION |
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108 / 195 page ![]() 108 CellularRAM Type 2 cellRAM_00_A0 October 4, 2004 Advan ce In form ati o n Bus Operating Modes CellularRAM products incorporate a burst mode interface found on Flash products targeting low-power, wireless applications. This bus interface supports asynchro- nous, page mode, and burst mode read and write transfers. The specific interface supported is defined by the value loaded into the BCR. Page mode is controlled by the refresh configuration register (RCR[7]). Asynchronous Mode CellularRAM products power up in the asynchronous operating mode. This mode uses the industry standard SRAM control bus (CE#, OE#, WE#, LB#/ UB#). READ operations (Figure 23) are initiated by bringing CE#, OE#, and LB#/UB# LOW while keeping WE# HIGH. Valid data will be driven out of the I/Os after the specified access time has elapsed. WRITE operations (Figure 24) occur when CE#, WE#, and LB#/ UB# are driven LOW. During asynchronous WRITE opera- tions, the OE# level is a “Don't Care,” and WE# will override OE#. The data to be written is latched on the rising edge of CE#, WE#, or LB#/UB# (whichever occurs first). Asynchronous operations (page mode disabled) can either use the ADV input to latch the address, or ADV can be driven LOW during the entire READ/ WRITE operation. During asynchronous operation, the CLK input must be held static (HIGH or LOW, no transitions). WAIT will be driven while the device is enabled and its state should be ignored. Figure 22. Power-Up Initialization Timing Note: ADV must remain LOW for page mode operation. Figure 23. READ Operation (ADV# LOW) VCC VCCQ tPU > 150 µs Device Initialization Device ready for normal operation VCC = 1.7 V Data Valid Address Valid tRC = READ Cycle Time CE# OE# WE# ADDRESS DATA LB#/UB# Don't Care |
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