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S71GS256 Datasheet(PDF) 108 Page - SPANSION

Part # S71GS256
Description  128N based MCPs
PDF  195 Pages
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Manufacturer  SPANSION [SPANSION]
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S71GS256 Datasheet(HTML) 108 Page - SPANSION

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108
CellularRAM Type 2
cellRAM_00_A0 October 4, 2004
Advan ce
In form ati o n
Bus Operating Modes
CellularRAM products incorporate a burst mode interface found on Flash products
targeting low-power, wireless applications. This bus interface supports asynchro-
nous, page mode, and burst mode read and write transfers. The specific interface
supported is defined by the value loaded into the BCR. Page mode is controlled
by the refresh configuration register (RCR[7]).
Asynchronous Mode
CellularRAM products power up in the asynchronous operating mode. This mode
uses the industry standard SRAM control bus (CE#, OE#, WE#, LB#/ UB#).
READ operations (Figure 23) are initiated by bringing CE#, OE#, and LB#/UB#
LOW while keeping WE# HIGH. Valid data will be driven out of the I/Os after the
specified access time has elapsed. WRITE operations (Figure 24) occur when
CE#, WE#, and LB#/ UB# are driven LOW. During asynchronous WRITE opera-
tions, the OE# level is a “Don't Care,” and WE# will override OE#. The data to be
written is latched on the rising edge of CE#, WE#, or LB#/UB# (whichever occurs
first). Asynchronous operations (page mode disabled) can either use the ADV
input to latch the address, or ADV can be driven LOW during the entire READ/
WRITE operation.
During asynchronous operation, the CLK input must be held static (HIGH or LOW,
no transitions). WAIT will be driven while the device is enabled and its state
should be ignored.
Figure 22. Power-Up Initialization Timing
Note: ADV must remain LOW for page mode operation.
Figure 23. READ Operation (ADV# LOW)
VCC
VCCQ
tPU > 150 µs
Device Initialization
Device ready for
normal operation
VCC = 1.7 V
Data Valid
Address Valid
tRC = READ Cycle Time
CE#
OE#
WE#
ADDRESS
DATA
LB#/UB#
Don't Care



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