R5F564MFDDFB datasheet(135/162 Pages) RENESAS

135 / 162 page

R01DS0173EJ0120 Rev.1.20

Page 135 of 162

Oct 20, 2022

RX64M Group

2. Electrical Characteristics

2.4

USB Characteristics

Figure 2.86

DP and DM Output Timing (Low Speed)

Figure 2.87

Test Circuit (Low Speed)

Table 2.45

On-Chip USB Low Speed (Host Only) Characteristics (DP and DM Pin Characteristics)

Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 3.0 to 3.6 V, 3.0 ≤ VREFH0 ≤ AVCC0,

VCC_USBA = AVCC_USBA = 3.0 to 3.6 V,

VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V,

USBA_RREF = 2.2 k

Ω ±1%, USBMCLK = 20/24 MHz, UCLK = 48 MHz,

PCLKA = 8 to 120 MHz, PCLKB = 8 to 60 MHz, Ta = Topr

Item

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Input characteristics

Input high level voltage

VIH

2.0

—

Input low level voltage

VIL

——

0.8

Differential input sensitivity

VDI

0.2

—

| DP – DM |

Differential common mode range

VCM

0.8

—

2.5

Output characteristics

Output high level voltage

VOH

2.8

—

3.6

IOH = –200 µA

Output low level voltage

VOL

0.0

—

0.3

IOL = 2 mA

Cross-over voltage

VCRS

1.3

—

2.0

Figure 2.86

Rise time

tLR

—

300

Fall time

tLF

—

300

Rise/fall time ratio

tLR / tLF

—

125

tLR/ tLF

Pull-down

characteristics

DP/DM pull-down resistance

(when the host controller function is

selected)

Rpd

14.25

—

24.80

DP, DM

tLF

tLR

90%

10%

90%

VCRS

Observation

point

200 pF to

600 pF

200 pF to

600 pF

1.5 k



3.6 V

USBb: 27



USBA: Not

necessary

R5F564MFDDFB Datasheet(PDF) 135 Page - Renesas Technology Corp

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