 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
R5F564MFDDFB Datasheet(PDF) 147 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
R5F564MFDDFB Datasheet(HTML) 147 Page - Renesas Technology Corp |
|
|
147 / 162 page  R01DS0173EJ0120 Rev.1.20 Page 147 of 162 Oct 20, 2022 RX64M Group 2. Electrical Characteristics 2.11 Flash Memory Characteristics Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 256-byte programming is performed 32 times for different addresses in 8-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is prohibited). Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the value of the minimum value). Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and the number of times programming and erasure proceed does not exceed the specified value. Note 4. These values are based on the results of reliability testing. Table 2.56 Code Flash Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0, VCC_USBA = AVCC_USBA = 3.0 to 3.6 V, VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V Temperature range for programming/erasure: Ta = Topr Item Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Test Conditions Min. Typ. Max. Min. Typ. Max. Programming time NPEC 100 times 256 bytes tP256 — 0.9 13.2 — 0.4 6 ms 8 Kbytes tP8K —29 176 —13 80 ms 32 Kbytes tP32K — 116 704 — 52 320 ms Programming time NPEC > 100 times 256 bytes tP256 — 1.1 15.8 — 0.5 7.2 ms 8 Kbytes tP8K —35 212 —16 96 ms 32 Kbytes tP32K — 140 848 — 64 384 ms Erasure time NPEC 100 times 8 Kbytes tE8K — 71 216 — 39 120 ms 32 Kbytes tE32K — 254 864 — 141 480 ms Erasure time NPEC > 100 times 8 Kbytes tE8K — 85 260 — 47 144 ms 32 Kbytes tE32K — 304 1040 — 169 576 ms Reprogramming/erasure cycle*1 NPEC 1000*2 — — 1000*2 —— Times Suspend delay time during programming tSPD — — 264 — — 120 µs First suspend delay time during erasing (in suspend priority mode) tSESD1 — — 216 — — 120 µs Second suspend delay time during erasure (in suspend priority mode) tSESD2 —— 1.7 —— 1.7 ms Suspend delay time during erasure (in erasure priority mode) tSEED —— 1.7 —— 1.7 ms Forced stop command tFD —— 32 —— 20 µs Data hold time*3, *4 tDRP 20 — — 20 — — Year Ta ≤ 85°C 10 — — 10 — — Ta ≤ 105°C FCU reset time tFCUR 35 — — 35 — — µs |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
